Research Catalog

A FORTRAN program for calculating the electrical parameters of extrinsic silicon

Title
A FORTRAN program for calculating the electrical parameters of extrinsic silicon / R.D. Larrabee, W.R. Thurber, and W.M. Bullis.
Author
Larrabee, R. D.
Publication
Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1980.

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StatusFormatAccessCall NumberItem Location
TextUse in library C 13.10:P400-63Off-site

Details

Additional Authors
  • Thurber, W. Robert.
  • Bullis, W. Murray, 1930-
  • United States. National Bureau of Standards.
  • Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division.
Description
iv, 48 pages; 27 cm.
Series Statement
  • Semiconductor measurement technology
  • NBS special publication ; 400-63
Uniform Title
  • Semiconductor measurement technology.
  • NBS special publication ; 400-63.
Subject
  • Silicon > Electric properties > Data processing
  • FORTRAN (Computer program language)
Note
  • "Electron Devices Division, Center for Electronics and Electrical Engineering, National Engineering Laboratory, National Bureau of Standards."
  • "Issued October 1980."
  • S/N 003-003-02260-8.
  • Item 247.
Bibliography (note)
  • Includes bibliographical references.
LCCN
80600158
OCLC
  • ocm07040743
  • 7040743
  • SCSB-1510888
Owning Institutions
Princeton University Library