Research Catalog

Title

Stress-induced phenomena in metallization : first international workshop, Ithaca, NY, 1991 / editors, Che-Yu Li, Paul Totta, Paul Ho.

Author

International Workshop on Stress-Induced Phenomena in Metallization (1st : 1991 : Ithaca, N.Y.)

Publication

New York : American Institute of Physics, ©1992.

Items in the Library & Off-site

Details

Additional Authors

• Li, Che-Yu.
• Totta, Paul.
• Ho, P. S.

Description

vii, 280 pages : illustrations; 25 cm.

Series Statement

• Conference proceedings / American Institute of Physics ; no. 263
• American Vacuum Society series ; 13

Uniform Title

• American Vacuum Society series ; 13.
• AIP conference proceedings ; no. 263.

Subject

• Semiconductors > Defects > Congresses
• Integrated circuits > Very large scale integration > Defects > Congresses
• Metallic films > Defects > Congresses
• Thin film devices > Defects > Congresses
• Aluminum films > Defects > Congresses
• Metallizing > Congresses
• Strains and stresses > Congresses
• Strains and stresses
• Integrated circuits > Very large scale integration > Defects
• Metallizing
• Semiconductors > Defects
• Thin film devices > Defects
• Elektrische Spannung
• Metallisieren
• Kongress

Genre/Form

Conference papers and proceedings

Note

• "DOE CONF-9109327"--T.p. verso.

Bibliography (note)

• Includes bibliographical references and index.

Additional Formats (note)

• Also available in an electronic version.

Contents

• Stress-Induced Phenomena in Metallizations: U.S. Perspective / Paul Totta -- Japanese Perspective: Recent Studies on Stress-Induced Phenomena in Metallizations in Japan / Shin-ichi Ogawa and Morio Inoue -- Stress-Induced Voiding and Stress Relaxation in Passivated Aluminum Line Metallizations / M. A. Korhonen, P. Borgesen and C.-Y. Li -- Analytical Calculation and Direct Measurement of Stress in an Aluminum Interconnect of Very Large Scale Integration and Masaharu / H. Yagi, H. Niwa, T. Hosoda, M. Inoue, H. Tsuchikawa and Masaharu Kato -- Study of Resistance Change and Open Failure at Stripe and Viahole by Stress Migration / T. Wada and Y. Hata -- Stress, Strain, and Failure in Interconnection Materials: Study by Wafer Curvature and X-Ray Diffraction Techniques / P. Flinn -- Modeling Void Growth and Failure of Passivated Metal Lines under Stress Electromigration Conditions / W. D. Nix and A. I. Sauter -- Detection of Reactions and Changes in Thin Film Morphology using Stress Measurements / Donald S. Gardner -- Reliability Implications of Stress Migration Void Growth Modeling for VLSI Metallization / T. D. Sullivan, L. Miller and G. Endicott -- Thermal and Electromlgration Voiding in Sandwich Metallurgies / E. Levine and B. Henry -- A Test Vehicle to Assess Stress Voiding Models and Acceleration Methods / William F. Filter and James A. Van Den Avyle -- UHVEM Observations of Stress-Induced Voiding in Al Metallization / H. Okabayashi, A. Tanikawa, H. Mori and H. Fujita
• Microstructure Analysis Technique for Aluminum Metallizations by Transmission Electron Microscopy / Y. Hata, H. Nanatsue, Y. Hidaka, Y. Harada and M. Inoue -- Stress Relaxation and Electromigration in Confined Al(Cu) Line Structures / M. A. Moske, P. S. Ho, C. K. Hu and M. B. Small -- Stress-Induced Voiding and Electromigration / P. Borgesen, M. A. Korhonen, D. D. Brown and C.-Y. Li -- The Effects of Stress on Thin Film Aluminum Metallization / S. N. Venkatrkrishnan and P. J. Ficalora -- Microstructural Evolution in Thin Metal Films: Implications for VLSI Interconnection Reliability / J. E. Sanchez, Jr., O. Kraft and E. Arzt -- Enhancement of Stress Migration Tolerance by in situ High Temperature Annealing / J. H. Park, C. S. Park, J. H. Chung, S. I. Lee, J. K. Lee and J. G. Lee.

ISBN

• 1563960826
• 9781563960826

LCCN

92072292

OCLC

• ocm27937326
• 27937326
• SCSB-1979699

Owning Institutions

Princeton University Library