Research Catalog
Proceedings of the 1993 Bipolar/BiCMOS Circuits and Technology Meeting
- Title
- Proceedings of the 1993 Bipolar/BiCMOS Circuits and Technology Meeting / sponsored by IEEE Electron Devices Society in cooperation with IEEE Circuits and Systems Society, IEEE Twin Cities Section ; edited by Janice Jopke.
- Author
- Bipolar/BiCMOS Circuits and Technology Meeting (1993 : Minneapolis, Minn.)
- Publication
- New York, NY : IEEE ; Piscataway, NJ : Additional copies may be ordered from IEEE Order Dept., ©1993.
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| Status | Format | Access | Call Number | Item Location |
|---|---|---|---|---|
| Text | Use in library | TK7874 .B57 1993 | Off-site |
Details
- Additional Authors
- Description
- 260 pages : illustrations; 28 cm
- Alternative Title
- 1993 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
- IEEE 1993 Bipolar Circuits and Technology Meeting
- Bipolar/BiCOMS Circuits and Technology Meeting, 1993, proceedings of the 1993.
- Subject
- Genre/Form
- Conference papers and proceedings.
- Note
- "IEEE catalog number 93CH3315-9"--Label on t.p. verso.
- Cover and spine title: 1993 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
- Bibliography (note)
- Includes bibliographical references and index.
- Additional Formats (note)
- Also available in an electronic version.
- Contents
- Technology and Reliability Issues for Multilevel Interconnects in Bipolar, BiCMOS and CMOS VLSIC/ULSICs / A.N. Saxena, K. Ramkumar, K. Ghosh and M. Bourgeois -- A.M. Amorphus Silicon Based Anti-Fuse / A.J. LaDuca -- Non-Local Model for Impact Ionization in Submicron Silicon BJTs / P. Scrobohaci, J. Nam and T.-W. Wang -- Plasma-Induced Bandgap Renormalization Model for Accurate Simulation of Advanced Bipolar Transistors / M. Reaz Shaheed and C.M. Maziar -- Investigation of the High-Frequency Performance of AlGaAs/GaAs HBTs Down to 20 K / D. Peters, W. Brockerhoff, R. Reuter, H. Meschede, A. Wiersch, B. Becker, W. Daumann, U. Seiler, E. Koenig and F. Tegude -- Simplified Multi-Application Method for Process Design and Its Use in the Design of a1 [mu]m Mixed-Signal BiCMOS Process / D. Doyle and W. Lane -- Effect of Trench Processing Conditions on Complementary Bipolar Analog Devices with SOI/Trench Isolation / R. Jerome, I. Post, K. Huffstater, G. Wodek, P. Travnicek and D. Williams -- Trench Isolation Process for BiCMOS Circuits / S. Poon and C. Lage -- Application of a Cluster Tool for Interface Engineering of Polysilicon Emitters / R. Reuss, C. Werkhoven, E. Granneman and M. Hendricks -- APCVD-Grown Self-Aligned SiGe-Base HBTs / J.N. Burghartz, T. Sedgwick, D. Grutzmacher, D. Nguyen-Ngoc and K. Jenkins -- 0.5 [mu]m Bipolar Technology Using a New Base Formation Method / C. Yamaguchi, Y. Kobayashi, M. Miyake, K. Ishii and H. Ichino -- 9.4 [mu]m2 38 GHz Sidewall Polycide Base Bipolar (SPOTEC) with Half-Micron CMOS Technology for Very-High-Speed ULSI / T. Shiba, Y. Tamaki, T. Onai, M. Saitoh, T. Kure and T. Nakamura -- Power + Logic Technology Applied to a Six Output Power Driver / A. Marshall and F. Carvajal -- Dual High-Current High-Voltage Driver / R. Shields and R. Pease -- Two Approaches to Increasing Spurious-Free Dynamic Range in High-Speed DACs / D. Mercer
- Silicon Bipolar Monolithic Downconverter for the Commercial Motorola Global Positioning System Receiver / C. Denig, M. McCombs, J. Ortiz, T. Post, H. Kennedy and D. Weninger -- BiCMOS Circuit Scaling / M. Elmasry and A. Bellaouar -- Half-Micron BiCMOS Device and Process Modeling / L. Borucki, T. Zirkle, J. Kirchgessner and P. Drennan -- Delay Models for Timing Simulation of CMOS/BiCMOS/BiNMOS Mixed Digital Circuits / S. Embabi and R. Damodaran -- Optimization-Based Placement Algorithms for BiCMOS Leaf Cell Generation / H. Xia and M. Lefebvre -- Simple Approach to Modeling Cross-Talk in Integrated Circuits / K. Joardar, J. Ford and P. Welch -- Figure of Merit for the High-Frequency Noise Behavior of Bipolar Transistors / H. de Graaff, L. de Vreede, G. Hurkx, J. Tauritz and R. Baets -- B6HF: A 0.8 [mu]m 25 GHz/25 psec Bipolar Technology for "Mobile Radio" and "Ultra Fast Data Link" IC Products / H. Klose, R. Lachner, K. Schon, R. Mahnkopf, K. Malek, M. Kerber, H. Braun, A. v. Felde, J. Popp, O. Cohrs, E. Bertagnolli and P. Sehrig -- Process Optimization for a Complementary Bipolar Technology with 5.5 GHz f[subscript T] PNP Transistors / T. Archer, T. Yamaguchi, R. Johnston and J. Lee -- High-Voltage High-Speed Polysilicon-Emitter Bipolar Transistor / D. McArthur and G. Conner -- Process and Device Optimization for a 30 GHz f[subscript T] Submicrometer Double Polysilicon Bipolar Technology / T. Yamaguchi, S. Uppili, G. Kawamoto, J. Lee and S. Simpkins -- High Speed Operational Amplifier Architectures / D. Smith -- JFET-Input Single-Supply Operational Amplifier with Rail-to-Rail Output / J. Close and F. Santos -- Very High Speed Operational Amplifier Array / M. Koen, D. Smith and P. Damitio -- BiCMOS Technology for Telecommunications / R. Hadaway, T. Brown, K. Harris and R. Foucault -- Novel High-Speed Low-Voltage Circuit Structures for BiCMOS SRAMs / R.X. Gu and M.I. Elmasry
- Novel VLSI BiCMOS/Bipolar Concurrent Multiplier-Accumulator for DSP Applications / D. Poornaiah, P. Mohan and M. Ahmad -- 3.3 V BiCMOS Current-Mode Logic Circuits for High-Speed Adders / A. Bellaouar and H. Touzene -- Low-Power BiCMOS Current-Mode Logic / S. Embabi, D. Brueske and R. Rachamreddy -- BiNMOS Design Constrains for 0.3 <Leff <0.4 Microns / Tom Fletcher -- Novel Design Concept and Method for a Low-Voltage BiCMOS Logic Circuit / S. Zhang, T. Kalkur, D. Chen, S. Lee and L. Gatza -- Modeling Anomalous Collector Current Behavior in Gated Lateral Bipolar Transistors / K. Joardar and J. Ford -- Non-Quasistatic Modeling of the BJT Quasi-Neural Base / C. Szeto, P. Ko and C. Hu -- Physical Approach to the Current and Charge Relations in SiGe-base HBT Modeling for Circuit Simulation and Design / G. Niu, G. Ruan and T.A. Tang -- Direct Extraction of Bipolar SPICE Transit Time Parameters Without Optimization / J. Kendall, A. Boothroyd, S. Oldenburg, R. Horner, S. Grant, T. Chamoun, S. Searles, J. Ilkowski and B. Prokes -- Effects of Positive Trapped Charge and Surface Recombination Centers on Excess Base Current in BJTs / S. Kosier, R. Schrimpf, A. Wei, M. Delaus, D.M. Fleetwood and W. Combs -- BJT Forward Bias Degradation Effects and Mechanisms: A Gain and Noise Study / C. Jack Sun, T. Grotjohn, C.-J. Huang, D. Reinhard and C.-C. Yu -- Effect of Interfacial Oxide on Hot Carrier Reliability of Polysilicon-Emitter NPN Transistors / R. Reuss, C. Varker and P. Bunevich -- Effects of Hydrogen on Current Gain and Emitter Resistance of Poly-Emitter Bipolar Transistors / J. Zhao, G. Li, K. Liao, M.R. Chin, T. Vu and J.C.-Y. Sun -- High-Speed Low-Power Cross-Coupled Active-Pull-Down ECL Circuit / C.T. Chuang, B. Wu and C. Anderson -- Voltage-Compensated Series-Gated Bipolar Circuit Operating at Sub-2V / H. Sato, K. Ueda, N. Sasaki, K. Niwano and H. Shinohara
- Design Methodology of Bipolar Standard Cell LSIs for Gbit/sec Signal Processing / K. Koike, K. Kawai and H. Ichino -- Sub-1 mA 1.5 GHz Silicon Bipolar Dual-Modulus Prescaler / T. Seneff, L. McKay, K. Sakamoto and N. Tracht -- Dynamic Thermal Feedback Model for Bipolar Transistors / J. Liang, H. Lin and K. Petrosky -- Physics-Based Multiple-Pole Models for BJT Self-Heating / J. Brodsky, D. Zweidinger and R. Fox -- Thermal Shunt Effect on the Current Instability of Multiple-Emitter-Finger Heterojunction Bipolar Transistors / L. Liou, B. Bayraktaroglu, C. Huang and J. Barrette -- Thermally Triggered Collapse of Collector Current in Power Heterojunction Bipolar Transistors / U. Seiler, E. Koening, P. Narozny and H. Dambkes.
- ISBN
- 078031316X
- 9780780313163
- 0780313178
- 9780780313170
- 0780313186
- 9780780313187
- LCCN
- 93078036
- OCLC
- ocm29353704
- 29353704
- SCSB-2002845
- Owning Institutions
- Princeton University Library