Research Catalog

Materials reliability in microelectronics IV : symposium held April 5-8, 1994, San Francisco, California, U.S.A.

Title
Materials reliability in microelectronics IV : symposium held April 5-8, 1994, San Francisco, California, U.S.A. / editors, Peter Børgesen [and others].
Publication
Pittsburgh, Pa. : Materials Research Society, ©1994.

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TextUse in library TK7874 .M3444 1994Off-site

Details

Additional Authors
  • Børgesen, Peter.
  • Materials Research Society. Spring Meeting (1994 : San Francisco, Calif.)
Description
xv, 630 pages : illustrations; 24 cm
Series Statement
Materials Research Society symposium proceedings, 0272-9172 ; v. 338
Uniform Title
Materials Research Society symposia proceedings ; v. 338.
Subject
  • Microelectronics > Reliability > Congresses
  • Microelectronics > Materials > Testing > Congresses
  • Electrodiffusion > Congresses
  • Electrodiffusion
  • Microelectronics > Materials > Testing
  • Microelectronics > Reliability
  • Kongress
  • Mikroelektronik
  • Mikrostruktur
  • Zuverlässigkeit
Genre/Form
  • Conference papers and proceedings.
  • San Francisco (Calif., 1994)
Bibliography (note)
  • Includes bibliographical references and indexes.
Contents
  • Reliability Implications of Defects in High Temperature Annealed Si/SiO[subscript 2]/Si Structures / W.L. Warren, D.M. Fleetwood, M.R. Shaneyfelt, P.S. Winokur, R.A.B. Devine, D. Mathiot, I.H. Wilson and J.B. Xu -- Comparison Between SiO[subscript 2] Films and Nitridated Oxides in N[subscript 2]O Ambient in Terms of Bulk/Interface Trapping Properties / Constantin Papadas and Patrick Mortini -- Impact of Various In Situ Preoxidation Process Perturbations on Gate Oxide Quality / P.K. Roy, M. Weinhoffer, R.L. Dyas and S. Meester -- Comparing the Structure and Behavior of Point Defects in Silicon Oxynitride Gate Dielectrics Formed by NH[subscript 3]-Nitridation and N[subscript 2]O-Growth/Nitridation / J.T. Yount, P.M. Lenahan, N.S. Saks and G.A. Brown -- The Roles of Several E' Variants in Thermal Gate Oxide Reliability / John F. Conley, Jr., P.M. Lenahan, H.L. Evans, R.K. Lowry and T.J. Morthorst -- Comparison of Film Quality and Step Coverage for Silicon Dioxide Dielectrics Formed by RTCVD Using Tetraethoxysilane and Silane / D.S. Miles, G.S. Harris, D. Venables, M.R. Mirabedini, J.J. Wortman, D.M. Maher and J.R. Hauser -- Reliability Study of Plasma Etching Damage in ULSI Process / Xiao-Yu Li, Jen-Tai Hsu, Paul Aum, Vivek Bissessur, David Chan and C.R. Viswanathan -- Effect of Power on the Properties of SiO[subscript 2] Films Produced by Plasma-Enhanced Chemical Vapour Deposition / Y. Tao, D. Landheer, J.-M. Baribeau, J.E. Hulse, D.-X. Xu and M.J. Graham -- Effect of Phosphorus-Doped Polysilicon Anneal on Thin Oxide Reliability as Probed with X-Ray Damage Characterization / R. Nachman and F. Cerrina -- Excess Conductance of MOS Diodes Suffered Current Stress and Elucidation of Induced Interface States / Masao Inoue and Junji Shirafuji -- Characterization of PECVD [actual symbol not reproducible] Films and Its Correlation to Device Performance and Reliability / Mansour Moinpour, Ken Mack, Johnny Cham, Farhad Moghadam and Byron Williams -- Diffusion-Induced Precipitation in Arsenosilicate Glass (AsSG) / Radhika Srinivasan, Tue Nguyen, Herbert L. Ho and Tai D. Nguyen -- Adhesion Measurements of Thin Films by Several Methods / Akira Kinbara, Tatsuya Banno, Ichiharu Kondo and Osamu Takenaka -- Reliability of Optical Coatings Submitted to a High Power Continuous Wave Laser Beam / Jean Dijon, E. Duloisy, J. Hue and M. Ignat -- An Analysis by Scanning Acoustic Microscopy of the Mechanical Stability of PSG and Si[subscript 3]N[subscript 4] Passivation Films / P. Scafidi, M. Ignat, P. Mortini and M. Marty -- HREM Structure Characterization of Relaxed Interfaces in Covalently Bonded Materials / Kurt Scheerschmidt -- Effects of Residual Stress on the Measurement of Hardness and Elastic Modulus Using Nanoindentation / G.M. Pharr, T.Y. Tsui, A. Bolshakov and W.C. Oliver -- Determination of the Mechanical Behaviour of Thin Films on Substrate Systems from Micromechanical Experiments / M. Ignat, P. Scafidi, E. Deloisy and J. Dijon -- Calculation of Stresses in Strained Semiconductor Layers / K. Nakajima -- The Role of Hydrogen in Current-Induced Degradation of GaAs/AlGaAs Heterojunction Bipolar Transistors / F. Ren, C.R. Abernathy, S.N.G. Chu, J.R. Lothian and S.J. Pearton -- W/Si[subscript 1-x]Ge[subscript x] Schottky Barrier: Effect of Stress and Composition / F. Meyer, V. Aubry, P. Warren and D. Dutartre -- The Effect of Substrate Temperature of the Crystallinity and Stress of Ion Beam Sputtered Silicon on Various Substrates / Cynthia G. Madras, L. Goldman, P.Y. Wong and I.N. Miaoulis -- Chip Surface Damage Induced by Internal Stress of Lead-on-Chip (LOC) Packages / Masazumi Amagai and Eiji Kawasaki -- Profiling the Deep Trap Level in the Semiconductor Heterostructures by Small-Pulse Deep Level Transient Spectroscopy / Zhang Rong, Yang Kai, Qing Guoyi, Shi Yi, Gu Shulin, Huang Hongbin, Hu Liqun, Zheng Youdou and Feng Duan -- X-Ray Strain Measurements in Fine-Line Patterned Al-Cu Films / M.A. Marcus, W.F. Flood, R.A. Cirelli, R.C. Kistler, N.A. Ciampa, W.M. Mansfield, D.L. Barr, C.A. Volkert and K.G. Steiner -- X-Ray Spectrometer with a Submicron X-Ray Beam for ULSI Microanalysis / Naoki Yamamoto, Yoshio Homma, Shinji Sakata and Yoshinori Hosokawa -- Plasticity, Microstructure and the Thermal Dependence of Flow Stresses in Aluminum Thin Film Interconnects / Ramnath Venkatraman -- Tensile Deformation-Induced Microstructures in Free-Standing Copper Thin Films / R.R. Keller, J.M. Phelps and D.T. Read -- The Effect of Ultra-Low Temperature Treatments on the Stress in Aluminum Metallization on Silicon Wafers / Frank Baldwin, Paul H. Holloway, Mark Bordelon and Thomas R. Watkins -- X-Ray Diffraction Determination of the Effect of Passivations on Stress in Patterned Lines of Tungsten / L. Maniguet, M. Ignat, M. Dupeux, J.J. Bacmann and Ph. Normandon -- Thermally Induced Stresses in Passivated Thin Films and Patterned Lines of AlSiCu / U. Burges, H. Helneder, H. Korner, H. Schroeder and W. Schilling -- Geometric Characterization of Electromigration Voids / Yolanda J. Kime and Peter Grach -- Line-Width Dependence of Stress in Passivated Al Lines During Thermal Cycling / D. Chidambarrao, K.P. Rodbell, M.D. Thouless and P.W. DeHaven -- Electromigration Failure of Narrow Al Alloy Conductors Containing Stress -- Voids / A.S. Oates and J.R. Lloyd -- Measurement and Interpretation of Strain Relaxation in Passivated Al-0.5% Cu Lines / Paul R. Besser, Thomas N. Marieb, John C. Bravman and Paul A. Flinn -- Line Width Dependence of Stress Relaxation and Yield Behavior of Passivated Al(Cu) Lines / I.-S. Yeo, S.G.H. Anderson, C.-N. Liao, D. Jawarani, H. Kawasaki and P.S. Ho -- Thermal Stresses in Passivated Copper Interconnects Determined by X-Ray Analysis and Finite Element Modeling / R.P. Vinci, E.M. Zielinski and J.C. Bravman -- The Effect of Variability Among Grain Boundary Energies on Grain Growth in Thin Film Strips / H.J. Frost, Y. Hayashi, C.V. Thompson and D.T. Walton -- Electromigration Properties and Their Correlation to the Physical Characteristics of Multilevel Metallizations / Kamesh Gadepally, Sam Geha, Edward R. Myers and Michael E. Thomas -- Microstructural Characterization of Copper Thin Films on Metallic Underlayers / E.M. Zielinski, R.P. Vinci and J.C. Bravman -- Segregation of Copper in Dilute Aluminum -- Copper Alloys for Interconnects / D.A. Smith, M.B. Small and A.J. Garratt-Reed -- Electromigration Lifetimes of Single Crystal Aluminum Lines with Different Crystallographic Orientations / Y.-C. Joo and C.V. Thompson -- The Microstructure and Electromigration Behaviour of Al-0.35%Pd Interconnects / L.J. Elliott, D.C. Paine and J.H. Rose -- Microstructural Evolution of Aluminum Interconnects During Post-Pattern Anneals: Correlation to Improved EM Lifetime / B. Miner, E.A. Atakov, A. Shepela and S. Bill -- Stress Distribution and Mass Transport Along Grain Boundaries During Steady-State Electromigration / M. Scherge, C.L. Bauer and W.W. Mullins -- Modeling Electromigration-Induced Stress Buildup Due to Nonuniform Temperature / J.J. Clement, C.V. Thompson and A. Enver -- Stress Relaxation and Electromigration Kinetics in Short Metal Lines: Transition to Creep Controlled Regime / E. Glickman, L. Klinger, A. Katsman and L. Levin -- Electromigration Failure in Thin Film Conductors Possessing a Near-Bamboo Structure / J.R. Lloyd -- Detailed Study of Electromigration Induced Damage in Al and AlCuSi Interconnects / U.E. Mockl, M. Bauer, O. Kraft, J.E. Sanchez, Jr. and E. Arzt -- Dislocation Climb in the Electron Wind / Z. Suo -- Precipitate Drifting and Coarsening Caused by Interface Electromigration / Qing Ma and Z. Sou -- Electromigration Damage in Conductor Lines: Recent Progress in Microscopic Observation and Mechanistic Modelling / E. Arzt, O. Kraft and U.E. Mockl -- In Situ Observations of Voiding in Metal Lines Under Passivation / T. Marieb, J.C. Bravman, P. Flinn and M. Madden
  • Transgranular Slits in Aluminum Interconnects Caused by Thermal Stress and Electric Current / W. Wang, Z. Suo and T.H. Hao -- Early Failure Sites and Electromigration / George O. Ramseyer, Joseph V. Beasock, Thomas E. Renz and Lois H. Walsh -- Passivation Design/Electromigration Performance Correlations in Layered Aluminum Metallizations / Carole D. Graas and Larry L. Ting -- Predicting and Comparing Electromigration Failure for Different Test Structures / D.D. Brown, M.A. Korhonen, P. Borgesen and C.-Y. Li -- Electromigration Characteristics of Cu and Al Interconnections / S. Shingubara, K. Fujiki, A. Sano, H. Sakaue and Y. Horiike -- Early Electromigration Failure in Submicron Width, Multilayer Al Alloy Conductors: Sensitivity to Stripe Length / A.S. Oates -- Interpretation of Resistance Changes During Interconnect Reliability Testing / John E. Sanchez, Jr. and Van Pham -- Critical Review of I-Particle Models in Electromigration Resistance Change Modeling / J. Niehof, H.C. de Graaff, A.J. Mouthaan and J.F. Verwey -- Effect of TiN Arc on Electromigration Performance of Tungsten Plug Via / Nguyen D. Bui, Van H. Pham, D. David Forsythe, Raymond T. Lee and John T. Yue -- Effects of Thin Film Stress in Sub Micron Multilevel Devices / Sharad Prasad, Y.C. Lu, D.K. Li, G.S. Reddy and F. Chen -- 1/F Noise Measurements in Al-Si, Al-Si-V and Al-Si-V-Pd Alloy Films / J.R. Kraayeveld, R.S. Augur, A.G. Dirks, A.H. Verbruggen and S. Radelaar -- Statistics of Crack Initiation and Propagation / H. Quinones and M. Shatzkes -- Fracture Strength of Thin Ceramic Membranes / J. Alexander Liddle, H.A. Huggins, P. Mulgrew, L.R. Harriott, H.H. Wade and K. Bolan -- Measurement of Adhesion at Film-Substrate Interfaces by Constant Depth Scratch Testing / I. Dutta, D.P. Lascurain and E.D. Secor -- Cracking Mechanisms of Fine Lines by Microwedge Scratch Testing / M.P. de Boer, H. Huang, J.C. Nelson, E.T. Lilleodden and W.W. Gerberich -- The Formation Mechanism and Removal Methods of Metal Pillar by Plasma Etch / Eungsoo Kim, Dong-Won Yun, Chang-Bum Jeong, Sang-Kug Han, Soon-Kwon Lim and Kyu-Hyun Choi -- Experimental Stress Analysis Methods and Some Thin Film Applications / Joan K. Vrtis and Richard J. Farris -- The Edge Delamination Test: Measuring the Critical Adhesion Energy of Thin-Film Coatings, Part II: Mode Mixity & Application / Edward O. Shaffer II, Scott A. Sikorski and Frederick J. McGarry -- Real-Time Thermo-Mechanical and Adhesive Property Evaluation of Thin Films and Multi-Layers / John A. Rogers and K.A. Nelson -- Water Adsorption at Polymer/Silicon Wafer Interfaces / Wen-Li Wu and Michael S. Kent -- Adhesion Strength of Cu/Polyimide Interfaces by Micro-Wedge Scratching / F. Wang, J.C. Nelson, H. Huang, R.L. Swisher and W.W. Gerberich -- Anisotropy in Thermal, Electrical and Mechanical Properties of Spin-Coated Polymer Dielectrics / Sue Ann Bidstrup, Thomas C. Hodge, Linda Lin, Paul A. Kohl, J.B. Lee and Mark G. Allen -- Organic Polymer Dielectrics in Microelectronic Technologies: Reliability Requirements, Testing, and Qualification / P.H. Townsend, R.H. Heist, D. Castillo, T.M. Stokich, B. Allen, M. Radler, T. Tarnowski, J. Blackson, H. Klassen, B. Miller, H. Theide, J. Strandberg and A. Karlsson -- Moisture-Assisted Crack Growth in Polymer Adhesive-Glass Sandwich Geometries / J.E. Ritter, T.J. Lardner, G.C. Prakash and A.J. Stewart -- Atomic Force Microscopy Structural Characterization of Polyaniline Thin Film Sensors / Jack Y. Josefowicz, Frederick G. Yamagishi and Camille I. van Ast -- Embedded Circuitry in Polymeric Films by Linear Energy Transfer (LET) of MeV Ions / D. Ila, A.L. Evelyn and Y. Qian -- Long-Term Study on the Optical Performance of Ion Implanted PMMA Under the Influence of Different Media / R. Kallweit, U. Roll, J. Kuppe and H. Strack.
ISBN
  • 1558992383
  • 9781558992382
OCLC
  • ocm31447409
  • 31447409
  • SCSB-2040347
Owning Institutions
Princeton University Library