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  • Electronic properties of doped semiconductors / B.I. Shklovskii, A.L. Efros.

    • Text
    • Berlin ; New York : Springer-Verlag, 1984.
    • 1984
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 86-471Offsite

  • Heavily doped semiconductors [by] Victor I. Fistulʹ. Translated from Russian by Albin Tybulewicz.

    • Text
    • New York, Plenum Press, 1969.
    • 1969
    • 1 Item
    FormatCall NumberItem Location
    Text TTE (Fistulʹ, V. I. Heavily doped semiconductors)Offsite

  • Self-doped conductiong polymers / Michael S. Freund and Bhavana A. Deore.

    • Text
    • Chichester, England ; Hoboken, NJ : Wiley, c2007.
    • 2007
    • 1 Item

    Available Online

    http://www.loc.gov/catdir/toc/ecip073/2006032502.html
    FormatCall NumberItem Location
    Text JSE 07-586Offsite

  • Untersuchung des reaktiven Sputterprozesses zur Herstellung von aluminiumdotierten Zinkoxide-Schichten für Silizium-Dünnschicht-solarzellen / Jürgen Hüpkes.

    • Text
    • Jülich : Forschungszentrum Jülich, Zentralbibliothek, c2006.
    • 2006
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 07-499Offsite

  • Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells [microform] / I. Weinberg, S. Mehta, and C. K. Swartz.

    • Text
    • [Washington, D.C. : National Aeronautics and Space Administration, 1984]
    • 1984

  • Properties of doped semiconducting materials / edited by V. S. Zemskov.

    • Text
    • New York : Nova Science Publishers, 1993.
    • 1993
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.8.D66 P76 1993Off-site

  • Rare-earth-doped devices : 10-11 February, 1997, San Jose, California / Seppo Honkanen, chair/editor ; sponsored and published by SPIE--the International Society for Optical Engineering; cooperating organization, DARPA--Defense Advanced Research Projects Agency.

    • Text
    • Bellingham, Washington : SPIE, [1997], ©1997.
    • 1997-1997
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.85 .R37 1997gOff-site

  • Heavily doped semiconductors / [by] Victor I. Fistulʹ. Translated from Russian by Albin Tybulewicz.

    • Text
    • New York : Plenum Press, 1969.
    • 1969
    • 1 Item
    FormatCall NumberItem Location
    Text QC612.S4 F513Off-site

  • Electronic properties of doped semiconductors / B.I. Shklovskii, A.L. Efros.

    • Text
    • 1984
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.8.D66 S5513 1984Off-site
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  • Proton conduction and defect studies in acceptor-doped potassium tantalate crystale / Wing Kit Lee.

    • Text
    • 1986.
    • 1986
    • 1 Item
    FormatCall NumberItem Location
    Text LD1237.5D 1986 .L333Off-site

  • Gapless semiconductors : a new class of materials / by I.M. Tsidilkovski.

    • Text
    • Berlin : Akademie-Verlag, 1988.
    • 1988
    • 1 Item
    FormatCall NumberItem Location
    Text QC612.S4 T784 1988gOff-site

  • Glow-discharge hydrogenated amorphous silicon / edited by K. Tanaka.

    • Text
    • Tokyo : KTK Scientific ; Dordrecht ; Boston : Kluwer Academic, 1989.
    • 1989
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.8.A5 G66 1989Off-site

  • Rare earth doped III-nitrides for optoelectronic and spintronic applications / Kevin O'Donnell, Volkmar Dierolf, editors.

    • Text
    • Dordrecht, The Netherlands : Springer, c2010.
    • 2010
    • 1 Item
    FormatCall NumberItem Location
    Text QC1 .T6 vol.124Off-site

  • Rare-earth-doped devices : 10-11 February, 1997, San Jose, California / Seppo Honkanen, chair/editor ; sponsored and published by SPIE--The International Society for Optical Engineering ; cooperating organization DARPA--Defense Advanced Research Projects Agency.

    • Text
    • Bellingham, Wash. : SPIE, c1997.
    • 1997
    • 1 Item
    FormatCall NumberItem Location
    Text TA1505.P762 vol.2996Off-site

  • Heavily doped semiconductors [by] Victor I. Fistulʹ. Translated from Russian by Albin Tybulewicz.

    • Text
    • New York, Plenum Press, 1969.
    • 1969
    • 1 Item
    FormatCall NumberItem Location
    Text 8287.349Off-site

  • Rare earth doped III-nitrides for optoelectronic and spintronic applications / Kevin O'Donnell, Volkmar Dierolf, editors.

    • Text
    • Dordrecht, The Netherlands : Springer, c2010.
    • 2010
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.8.D66 R37 2010Off-site

  • Rare-earth-doped devices : 10-11 February, 1997, San Jose, California / Seppo Honkanen, chair/editor ; sponsored and published by SPIE--The International Society for Optical Engineering ; cooperating organization DARPA--Defense Advanced Research Projects Agency.

    • Text
    • Bellingham, Wash. : SPIE, c1997.
    • 1997
    • 1 Item
    FormatCall NumberItem Location
    Text TA1505 .P762 vol.2996Off-site

  • Heavily doped semiconductors [by] Victor I. Fistulʹ. Translated from Russian by Albin Tybulewicz.

    • Text
    • New York, Plenum Press, 1969.
    • 1969
    • 1 Item
    FormatCall NumberItem Location
    Text 8287.349Off-site

  • Rare earth doped III-nitrides for optoelectronic and spintronic applications / Kevin O'Donnell, Volkmar Dierolf, editors.

    • Text
    • Dordrecht, the Netherlands ; New York : Springer ; Bristol, UK : in association with Canopus Academic Pub., ©2010.
    • 2010
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.8.D66 R37 2010Off-site

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