Research Catalog

  • Gallium arsenide lasers, edited by C. H. Gooch.

    • Text
    • London, New York, Wiley-Interscience [c1969]
    • 1969
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 72-170Offsite
  • Material for the Gunn effect [by] J. W. Orton.

    • Text
    • London, Mills & Boon [1971]
    • 1971
    • 1 Item
    FormatCall NumberItem Location
    Text JSD 73-1587Offsite
  • Gallium, arsenide, microwave, bulk, and transit-time devices [compiled by] Lester F. Eastman.

    • Text
    • Dedham, Mass., Artech House [c1972]
    • 1972
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 75-984Offsite
  • Gallium arsenide: proceedings of the international symposium organized by the Institute of Physics and the Physical Society in co-operation with the Avionics Laboratory of the U. S. Air Force, Reading, September 1966; edited by Dr. A. C. Stickland.

    • Text
    • London, Institute of Physics & the Physical Society, 1967.
    • 1967
    • 1 Item
    FormatCall NumberItem Location
    Text PAA (Institute of Physics and the Physical Society. Conference series, no. 3) no. 3 (1967)Offsite
  • Gallium arsenide; proceedings of the second international symposium, organized by Southern Methodist University and the Institute of Physics and the Physical Society, in cooperation with the Avionics Laboratory of the U. S. Air Force, Dallas, Tex., Oct. 1968. Editor: C. I. Pedersen.

    • Text
    • London, Institute of Physics and the Physical Society, 1969.
    • 1969
    • 1 Item
    FormatCall NumberItem Location
    Text PAA (Institute of Physics and the Physical Society. Conference series, no. 7) no. 7 (1969)Offsite
  • Gallium arsenide and related compounds, 1980 : invited and contributed papers from the Eighth International Symposium on Gallium Arsenide and Related Compounds held at the Technical University of Vienna, 22-24 September 1980 / edited by H.W. Thim.

    • Text
    • Bristol : Institute of Physics, c1981.
    • 1981
    • 1 Item
    FormatCall NumberItem Location
    Text JSK 77-69 Library has: no. 9-68 (incomplete). Library has: No. 9-68 (incomplete) in JSK 77-69; no. 69-71 classed separately and traced v. 56 (1980)Offsite
  • VHSIC, very high speed integrated circuits : technologies and tradeoffs / Arpad Barna.

    • Text
    • New York : Wiley, c1981.
    • 1981
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 82-119Offsite
  • Gallium arsenide and related compounds, 1981 : contributed papers from the Ninth International Symposium on Gallium Arsenide and Related Compounds held at Oiso, Japan, 20-23 September 1981 / edited by T Sugano.

    • Text
    • Bristol, Eng. : Institute of Physics, c1982.
    • 1982
    • 1 Item
    FormatCall NumberItem Location
    Text JSK 77-69 no. 63 v. 63 (1981)Offsite
  • GaAs FET principles and technology / James V. DiLorenzo, editor in chief, Deen D. Khandelwal, associate editor.

    • Text
    • Dedham, Mass. : Artech House, c1982.
    • 1982
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 83-100Offsite
  • Semi-insulating III-V materials : Evian 1982 / edited by Sherif Makram-Ebeid, Brian Tuck.

    • Text
    • Nantwich, Cheshire : Shiva Publishing, c1982.
    • 1982
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 83-1071Offsite
  • Applications of GaAs MESFETs / edited by Robert Soares, Jacques Graffeuil, Juan Obregón.

    • Text
    • Dedham, MA : Artech House, c1983.
    • 1983
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 84-974Offsite
  • VLSI fabrication principles : silicon and gallium arsenide / Sorab K. Ghandhi.

    • Text
    • New York : Wiley, c1983.
    • 1983
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 84-399Offsite
  • Dielectric films on gallium arsenide / W.F. Croydon and E.H.C. Parker.

    • Text
    • New York : Gordon and Breach, c1981.
    • 1981
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 84-458Offsite
  • Gallium arsenide and related compounds, 1982 : contributed papers from the Tenth International Symposium on Gallium Arsenide and Related Compounds held at Albuquerque, New Mexico, 19-22 September 1982 / edited by G E Stillman.

    • Text
    • Bristol, Eng. : Institute of Physics, c1983.
    • 1983
    • 1 Item
    FormatCall NumberItem Location
    Text JSK 77-69 no. 65 v. 65 (1982)Offsite
  • Gallium arsenide and related compounds, 1984 : invited and contributed papers from the Eleventh International Symposium on Gallium Arsenide and Related Compounds held at Biarritz, France, on 26-28 September 1984 / edited by B. de. Cremoux.

    • Text
    • Bristol, Eng. ; Boston : A. Hilger, 1985.
    • 1985
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 85-2088Offsite
  • Properties of gallium arsenide.

    • Text
    • London ; New York : INSPEC, Institution of Electrical Engineers, c1986.
    • 1986
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 87-735Offsite
  • Defect recognition and image processing in III-V compounds, II : proceedings of the Second International Symposium on Defect Recognition and Image Processing in III-V Compounds (DRIP II), Monterey, California, April 27-29, 1987 / edited by E.R. Weber.

    • Text
    • Amsterdam ; New York : Elsevier, 1987.
    • 1987
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 88-2999Offsite
  • Properties of gallium arsenide.

    • Text
    • London ; New York : INSPEC, Institution of Electrical Engineers, c1990.
    • 1990
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 90-954Offsite
  • Compound semiconductors 1994 : proceedings of the twenty-first international symposium on compound semiconductors held in San Diego, California, 18-22 September 1994 / edited by Herb Goronkin and Umesh Mishra.

    • Text
    • Bristol ; Philadelphia : Institute of Physics Pub., c1995.
    • 1995
    • 2 Items
    FormatCall NumberItem Location
    Text JSE 95-920Offsite
    FormatCall NumberItem Location
    Text JSE 95-914Offsite
  • VLSI fabrication principles : silicon and gallium arsenide / Sorab K. Ghandhi.

    • Text
    • New York : J. Wiley, c1994.
    • 1994
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 02-1281 1994Offsite
  • Properties of gallium arsenide / edited by M.R. Brozel and G.E. Stillman.

    • Text
    • London : INSPEC, 1996.
    • 1996
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 97-76Offsite
  • Investigation of a GaAlAs Mach-Zehnder electro-optic modulator [microform] / David M. Materna ; prepared for Lewis Research Center under Grant NCC 3-54.

    • Text
    • [Cleveland, Ohio] : The Center ; [Springfield, Va. : For sale by the National Technical Information Service, 1987]
    • 1987
  • Properties of gallium arsenide.

    • Text
    • London ; New York : INSPEC, The Institution of Electrical Engineers, [1990], ©1990.
    • 1990-1990
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.G3 P76 1990Off-site
  • GaAs detectors and electronics for high-energy physics : proceedings of the 20th Workshop of the INFN Eloisatron Project, Erice, Trapani, Italy, 12-18 January 1992 / editors: C. del Papa, P.G. Pelfer, K. Smith ; [sponsored by the Italian Institute for Nuclear Physics, the Italian Ministry of University and Scientific Research, and the Sicilian Regional government.]

    • Text
    • Singapore ; River Edge, N.J. : World Scientific, [1992], ©1992.
    • 1992-1992
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.G3 W67 1992gOff-site
  • VHSIC, very high speed integrated circuits : technologies and tradeoffs / Arpad Barna.

    • Text
    • New York : Wiley, [1981], ©1981.
    • 1981-1981
    • 1 Item
    FormatCall NumberItem Location
    Text TK7874 .B39Off-site
  • VLSI fabrication principles : silicon and gallium arsenide / Sorab K. Ghandhi.

    • Text
    • New York : J. Wiley, [1994], ©1994.
    • 1994-1994
    • 1 Item
    FormatCall NumberItem Location
    Text TK7874 .G473 1994Off-site
    Not available - Please for assistance.
  • VLSI fabrication principles : silicon and gallium arsenide / Sorab K. Ghandhi.

    • Text
    • New York : Wiley, [1983], ©1983.
    • 1983-1983
    • 1 Item
    FormatCall NumberItem Location
    Text TK7874 .G473 1983Off-site
  • Gallium arsenide and related compounds : Third International Workshop, San Miniato, Tuscany, Italy, 21-23 March 1995, Centro Studi "I Cappuccini" della Cassa di Risparmio di S. Miniato ; editors, P.G. Pelfer ... [et al.].

    • Text
    • Singapore ; River Edge, N.J. : World Scientific, [1996], ©1996.
    • 1996-1996
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.G3 G34 1996Off-site
  • Properties of gallium arsenide / edited by M.R. Brozel and G.E. Stillman.

    • Text
    • London : INSPEC, 1996.
    • 1996
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.G3 P76 1996gOff-site
  • Technical digest / GaAs IC Symposium.

    • Text
    • New York : Institute of Electrical and Electronics Engineers, ©1982-
    • 1982-present
    • 22 Items
    FormatCall NumberItem Location
    Text TK7874 .I323 (2001)Off-site
    FormatCall NumberItem Location
    Text TK7874 .I323 (2002)Off-site
    FormatCall NumberItem Location
    Text TK7874 .I323 (2003)Off-site
  • Applications of GaAs MESFETs / edited by Robert Soares, Jacques Graffeuil, Juan Obregon.

    • Text
    • 1983
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.95 .A66 1983Off-site
  • Gallium arsenide lasers / edited by C. H. Gooch.

    • Text
    • London ; New York : Wiley-Interscience, [1969], [©1969]
    • 1969-1969
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.3 .G65Off-site
  • Gallium arsenide : proceedings of the International Symposium organized by the Institute of Physics and the Physical Society in co-operation with the Avionics Laboratory of the U.S. Air Force, Reading, September 1966 / edited by Dr. A.C. Stickland.

    • Text
    • London : Institute of Physics & the Physical Society, 1967.
    • 1967
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.85 .I5 1966Off-site
  • GaAs FET principles and technology / James V. DiLorenzo, editor in chief, Deen D. Khandelwal, associate editor.

    • Text
    • 1982
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.95 .G27 1982Off-site
  • Defect recognition and image processing in III-V compounds : proceedings of the International Symposium on Defect Recogition and Image Processing in III-V Compounds (DRIP 1985), Montpellier, France, July 2-4, 1985 / edited by J.P. Fillard.

    • Text
    • Amsterdam ; New York : Elsevier, 1985.
    • 1985
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.85 .I5825 1985Off-site
  • Properties of gallium arsenide.

    • Text
    • London ; New York : INSPEC, Institution of Electrical Engineers, [1986], ©1986.
    • 1986-1986
    • 1 Item
    FormatCall NumberItem Location
    Text QD181.G2 P76Off-site
  • Defect recognition and image processing in III-V compounds, II : proceedings of the Second International Symposium on Defect Recognition and Image Processing in III-V Compounds (DRIP II), Monterey, California, April 27-29, 1987 / edited by E.R. Weber.

    • Text
    • Amsterdam ; New York : Elsevier, 1987.
    • 1987
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.85 .I5825 1987Off-site
  • Gallium arsenide and related compounds, 1985 : proceedings of the Twelfth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, on 23-28 September 1985 / edited by M. Fujimoto.

    • Text
    • Bristol, Eng. : Hilger, [1986], ©1986.
    • 1986-1986
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.G3 I57 1985gOff-site
  • Gallium arsenide and related compounds (St. Louis), 1976 : proceedings of the sixth International Symposium on Gallium Arsenide and Related Compounds, St. Louis Conference, 26-29 September 1976 / edited by Lester F. Eastman.

    • Text
    • Bristol : Institute of Physics, 1977.
    • 1977
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.G3 I57 1976 vol.2Off-site
  • Gallium arsenide and related compounds (Edinburgh), 1976 : proceedings of the sixth International Symposium on Gallium Arsenide and Related Compounds, Edinburgh Conference, 20-22 September 1976 / edited by C. Hilsum.

    • Text
    • Bristol : Institute of Physics, 1977.
    • 1977
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.G3 I57 1976 vol.1Off-site
  • Technical digest 1982 / IEEE Gallium Arsenide Integrated Circuit Symposium, New Orleans, November 9, 10, 11 ; sponsored by the IEEE Electron Devices Society and cooperatively sponsored by the IEEE Microwave Theory and Techniques Society.

    • Text
    • New York, NY (345 E. 47 St., New York 10017) : Institute of Electrical & Electronics Engineers, c1982.
    • 1982
    • 1 Item
    FormatCall NumberItem Location
    Text TK7874 .I323 1982Off-site
  • Gallium arsenide: proceedings of the International Symposium organized by the Institute of Physics and the Physical Society in co-operation with the Avionics Laboratory of the U.S. Air Force, Reading, September 1966; edited by Dr. A.C. Stickland.

    • Text
    • London, Institute of Physics & the Physical Society, 1967.
    • 1967
    • 1 Item
    FormatCall NumberItem Location
    Text 8287.375Off-site
  • Gallium arsenide; proceedings of the second international symposium, organized by Southern Methodist University and the Institute of Physics and the Physical Society, in cooperation with the Avionics Laboratory of the U.S. Air Force, Dallas, Tex., Oct. 1968. Editor: C. I. Pedersen.

    • Text
    • London, Institute of Physics and the Physical Society, 1969.
    • 1969
    • 1 Item
    FormatCall NumberItem Location
    Text 8287.49297.1968Off-site
  • Influences on the chemical activity of GaAs surfaces.

    • Text
    • 1976.
    • 1976
    • 1 Item
    FormatCall NumberItem Location
    Text PRIN 685 1976 .273Off-site
  • The surface structure of the non-polar surfaces of ZnO, GaAs and GaP by LEED analysis.

    • Text
    • 1976.
    • 1976
    • 1 Item
    FormatCall NumberItem Location
    Text PRIN 685 1976 .5705Off-site
  • Correlation of atomic and electronic structure of GaAs (100) surfaces.

    • Text
    • 1975.
    • 1975
    • 1 Item
    FormatCall NumberItem Location
    Text PRIN 685 1975 .857Off-site
  • Gallium arsenide and related compounds, 1982 : contributed papers from the Tenth International Symposium on Gallium Arsenide and Related Compounds held at Albuquerque, New Mexico, 19-22 September 1982 / edited by G. E. Stillman.

    • Text
    • Bristol [Avon] : Institute of Physics, c1983.
    • 1983
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.8.G3 I57 1982Off-site
  • Arsenid gallii︠a︡: poluchenie, svoĭstva i primenenie. Pod red. F.P. Kesamanly i D.N. Nasledova.

    • Text
    • Moskva, Nauka, Glav. red. fiziko-matematicheskoĭ lit-ry, 1973.
    • 1973
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.8.G3A77Off-site
  • Technical digest 1983 / IEEE Gallium Arsenide Integrated Circuit Symposium, Phoenix, Arizona, October 25-27, 1983 ; sponsored by the IEEE Electron Devices Society and cooperatively sponsored by the IEEE Microwave Theory and Techniques Society.

    • Text
    • New York, NY (345 E. 47 St., New York 10017) : Institute of Electrical and Electronics Engineers, c1983.
    • 1983
    • 1 Item
    FormatCall NumberItem Location
    Text TK7874 .I323 1983Off-site
  • Gallium arsenide and related compounds, 1978 : proceedings of the Seventh International Symposium on Gallium Arsenide and Related Compounds, held in St. Louis, Missouri, 24-27 September 1978 / edited by Charles M. Wolfe.

    • Text
    • Bristol, Eng. : Institute of Physics, c1979.
    • 1979
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.8.G3 I57 1978Off-site

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