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Performance of Ga₀.₄₇In₀.₅₃As cells over a range of proton energies [microform] / I. Weinberg ... [et al.].
- Text
- [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1985]
- 1995
Development of a unique laboratory standard, indium gallium arsenide detector for the 500- 1700 nm spectral region [microform] : NASA phase II, final report.
- Text
- Princeton, N.J. : EPITAXX, Inc. ; [Washington, D.C. : National Aeronautics and Space Administration, 1990]
- 1990
- 1 Resource
Available Online
http://purl.access.gpo.gov/GPO/LPS67907Annual report on material growth and characterization for solid state devices [microform] : October 1 1982 to Novemer 30, 1983 / submitted by: E. K. Stefanakos ... [et al.].
- Text
- Greensboro, NC : North Carolina Agricultural and Technical State University, Dept. of Electrical Engineering ; [Hampton, Va. : National Aeronautics and Space Administration, Langley Research Center, 1983]
- 1983
Zone leveling and solution growth of complex compound semiconductors in space : final report / by Klaus J. Bachmann.
- Text
- [Hampton, Va.] : [National Aeronautics and Space Administration, Langley Research Center], [1986]
- 1986
- 1 Resource
Available Online
https://purl.fdlp.gov/GPO/LPS112352Zone leveling and solution growth of complex compound semiconductors in space [microform] : final report / by Klaus J. Bachmann.
- Text
- [Hampton, Va. : National Aeronautics and Space Administration, Langley Research Center, 1986]
- 1986
- 1 Resource
Available Online
http://purl.access.gpo.gov/GPO/LPS112352
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