Research Catalog

  • Properties of indium phosphide.

    • Text
    • London ; New York : INSPEC, The Institution of Electrical Engineers, c1991.
    • 1991
    • 1 Item
    FormatCall NumberItem Location
    Text JSG 91-150Offsite
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  • Fifth International Conference on Indium Phosphide and Related Materials : April 19-22, 1993, Maison de la chimie, Paris, France / sponsored by the Société des électriciens et des électroniciens, IEEE Lasers and Electro-Optics Society and IEEE Electron Devices Society.

    • Text
    • [New York?] : IEEE, c1993.
    • 1993
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 93-820Offsite
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  • Sixth International Conference on Indium Phosphide and Related Materials : conference proceedings : March 27-31, 1994, Fess Parkers' Red Lion Resort, Santa Barbara, California, USA / sponsored by the the IEEE Lasers and Electro-Optics Society, and IEEE Electron Devices Society.

    • Text
    • [New York] : Institute of Electrical and Electronics Engineers ; Piscataway, NJ : IEEE Service Center, c1994.
    • 1994
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 94-658Offsite
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  • Eighth International Conference on Indium Phosphide and Related Materials, April 21-25, 1996, Convention Center "Stadtgarten" Schwäbisch Gmünd, Germany / sponsored by Information Technology Society within VDE(ITG) ... <et al.>

    • Text
    • [New York, NY] : Institute of Electrical and Electronics Engineers ; Piscataway, NJ : IEEE Service Center, c1996.
    • 1996
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 96-622Offsite
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  • 1997 International Conference on Indium Phosphide and Related Materials : 11-15 May 1997, Tara Hyanns Hotel and Resort, Hyannis, Cape Cod, Massachusetts, USA / sponsored by the IEEE Lasers and Electro-Optics Society and the IEEE Electron Devices Society.

    • Text
    • [New York, N.Y.] : Institute of Electrical and Electronics Engineers ; Piscataway, N.J. : IEEE Service Center, c1997.
    • 1997
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 97-395Offsite
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  • 1998 International Conference on Indium Phosphide and Related Materials : May 11-15, 1998, University of Tsukuba, University Hall, Tsukuba, Ibaraki, JAPAN / sponsored by the Japan Society of Applied Physics, IEEE/Lasers and Electro-Optics Society, IEEE/Electron Devices Society.

    • Text
    • [New York, N.Y.] : Institute of Electrical and Electronics Engineers ; Piscataway, N.J. : IEEE Service Center, c1998.
    • 1998
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 99-13Offsite
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  • InP-based materials and devices : physics and technology / edited by Osamu Wada, Hideki Hasegawa.

    • Text
    • New York ; Chichester [England] : Wiley, c1999.
    • 1999
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 99-975Offsite
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  • IPRM 1999 : Eleventh International Conference on Indium Phosphide and Related Materials : conference proceedings : May 16-20, 1999, Congress Center Davos, Davos, Switzerland / technical co-sponsors: Swiss Section of IEEE, IEEE/Lasers and Electro-Optics Society, IEEE/Electron Devices Society.

    • Text
    • Piscataway, N.J. : IEEE, c1999.
    • 1999
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 00-14Offsite
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  • Properties, processing and applications of indium phosphide / edited by T. P. Pearsall.

    • Text
    • London : Institution of Electrical Engineers, 1999.
    • 2000
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 00-698Offsite
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  • InP and related compounds : materials, applications and devices / edited by M. O. Manasreh.

    • Text
    • Amsterdam : Gordon and Breach Science, c2000.
    • 2000
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 00-1966Offsite
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  • Conference proceedings : 2000 International Conference on Indium Phosphide and Related Materials, 14-18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA / sponsored by IEEE Electron Devices Society and the IEEE Lasers and Electro-Optics Society.

    • Text
    • [New York] : IEEE ; Piscataway, N.J. : IEEE Service Center [distributor], c2000.
    • 2000
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 01-204Offsite
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  • Recent progress in InP solar cell research [microform] / I. Weinberg ... [et al.].

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service, 1991]
    • 1991
  • Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells [microform] / Raj K. Jain and Dennis J. Flood.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service, 1990]
    • 1990
  • A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells [microform] / Victor G. Weizer and Navid S. Fatemi.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service, 1991]
    • 1991
  • Status and future direction of InP solar cell research [microform] / R.K. Jain and I. Weinberg.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service, 1992]
    • 1992
  • Defect behavior, carrier removal and predicted in-space injection annealing of InP solar cells [microform] / I. Weinberg and C.K. Swartz and P.J. Drevinsky.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration, [1992]
    • 1992
  • Advanced power systems for EOS [microform] / Sheila G. Bailey, Irving Weinberg and Dennis J. Flood.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va.? : National Technical Information Service [distributor], 1991]
    • 1991
  • Sinterless contacts to shallow junction InP solar cells [microform] / V.G. Weizer, N.S. Fatemi, and A.L. Korenyi-Both.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service, 1992]
    • 1992
  • Effect of InAlAs window layer on efficiency of indium phosphide solar cells [microform] / Raj K. Jain and Geoffrey A. Landis.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service, 1992]
    • 1992
  • The achievement of low contact resistance to indium phosphide [microform] : the roles of Ni, Au, Ge, and combinations thereof / Navid S. Fatemi and Victor G. Weizer.

    • Text
    • [Washington, DC : National Aeronautics and Space Administration ; Springfield, Va. : For sale by the National Technical Information Service, 1992]
    • 1992
  • Submillimeter sources for radiometry using high power Indium Phosphide Gunn diode oscillators [microform] : final report for contract no. NAS7-996 / prepared by: Millitech Corporation.

    • Text
    • [Washington, DC? : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1990]
    • 1990
  • Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells [microform] / Raj K. Jain, Irving Weinberg, and Dennis J. Flood.

    • Text
    • [Washington, DC : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1993]
    • 1993
  • Texturing of InP surfaces for device applications [microform] / Sheila G. Bailey and Navid S. Fatemi and Geoffrey A. Landis.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1993]
    • 1993
  • Lattice-mismatched In₀(point)₄₀Al₀(point)₆₀As window layers for indium phosphide solar cells [microform] / R.K. Jain ... [et al.].

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1993]
    • 1993
  • Diffusion length damage coefficient and annealing studies in proton-irradiated InP [microform] / Roshanak Hakimzadeh ... [et al.].

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1993]
    • 1993
  • Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells [microform] / V.G. Weizer, N.S. Fatemi, and A.L. Korenyi-Both.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1993]
    • 1993
  • Indium phosphide and related materials : 13th IPRM : conference proceedings : 2001 International Conference on Indium Phosphide and Related Materials : 14-18 May, 2000, Nara New Public Hall, Nara, Japan / sponsored by the Japan Society of Applied Physics ... [et al.] ; in cooperation with the Institute of Electronics, Information and Communication Engineers ... [et al.].

    • Text
    • Piscataway, New Jersey : IEEE, c2001.
    • 2001
    • 1 Item
    FormatCall NumberItem Location
    Text JSG 01-214Offsite
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  • 14th Indium Phosphide and Related Materials Conference : IPRM : conference proceedings : May 12-16, 2002, Stockholm, Sweden / sponsored by IEEE Electron Devices Society and IEEE Lasers and Electro-Optics Society.

    • Text
    • Piscataway, New Jersey : IEEE, c2002.
    • 2002
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 02-731 (May 12-16, 2002)Offsite
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  • Seventh International Conference on Indium Phosphide and Related Materials : conference proceedings : May 9-13, 1995, Hokkaido University Conference Hall, Sapporo, Hokkaido, Japan / sponsored by the Japan Society of Applied Physics, IEEE Lasers and Electro-Optics Society, and the IEEE Electron Devices Society.

    • Text
    • [New York] : Institute of Electrical and Electronics Engineers ; Piscataway, NJ : IEEE Service Center, c1995.
    • 1995
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 95-916Offsite
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  • 2003 International Conference [on] Indium Phosphide and Related Materials : conference proceedings : 12-16 May, 2003, Fess Parker's Doubletree Resort, Santa Barbara, California, USA / IEEE Lasers and Electro-Optics Society and IEEE Electron Devices Society.

    • Text
    • Piscataway, N.J. : IEEE, c2003.
    • 2003
    • 1 Item

    Available Online

    http://ieeexplore.ieee.org/servlet/opac?punumber=8572
    FormatCall NumberItem Location
    Text JSF 03-774Offsite
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  • 16th IPRM : 2004 International Conference on Indium Phosphide and Related Materials : conference proceedings : May 31 (Mon.)-June 4 (Fri.), 2004, Kagoshima Shimin Bunka Hall, Kagoshima, Japan / sponsored by, The Japan Society of Applied Physics, IEEE Lasers and Electro-Optics Society and IEEE Electron Devices Society.

    • Text
    • Piscataway, N.J. : IEEE, c2004.
    • 2004
    • 1 Item
    FormatCall NumberItem Location
    Text JSG 05-64Offsite
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  • 2005 International Conference on Indium Phosphide and Related Materials : May 8-12, 2005, Glasgow, Scotland.

    • Text
    • Piscataway, N.J. : IEEE, c2005.
    • 2005
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 05-706Offsite
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  • Potential for use of Indium phosphide solar cells in the space radiation environment [microform] / I. Weinberg, C.K. Swartz, and R.E. Hart, Jr.

    • Text
    • [Cleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, 1985]
    • 1985
  • Indium phosphide solar cell research in the United States : comparison with nonphotovoltaic sources / I. Weinberg, C.K. Swartz, and R.E. Hart, Jr.

    • Text
    • [Washington, D.C.] : National Aeronautics and Space Administration ; [Springfield, Va.] : [National Technical Information Service, distributor], [1989]
    • 1989
    • 1 Resource

    Available Online

    https://purl.fdlp.gov/GPO/LPS108764
  • Indium phosphide solar cell research in the United States [microform] : comparison with nonphotovoltaic sources / I. Weinberg, C.K. Swartz, and R.E. Hart, Jr.

    • Text
    • [Washington, D.C.] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1989]
    • 1989
  • Properties of indium phosphide.

    • Text
    • London ; New York : INSPEC, [1991], ©1991.
    • 1991-1991
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.I53 P76 1991Off-site
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  • Indium phosphide and related materials : processing, technology, and devices / Avishay Katz, editor.

    • Text
    • Boston : Artech House, [1992], ©1992.
    • 1992-1992
    • 1 Item
    FormatCall NumberItem Location
    Text TK7870 .I44 1992Off-site
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  • Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP / Sadao Adachi.

    • Text
    • New York : Wiley, [1992], ©1992.
    • 1992-1992
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.8.G3 A33 1992Off-site
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  • Fifth International Conference on Indium Phosphide and Related Materials : conference proceedings / April 19-22, 1993, Maison de la Chimie, Paris, France ; sponsored by the Société des Electriciens et des Electroniciens (SEE), IEEE Lasers and Electro-Optics Society, and IEEE Electron Devices Society.

    • Text
    • [New York] : Institute of Electrical and Electronics Engineers ; Piscataway, NJ : IEEE Service Center, [1993], ©1993.
    • 1993-1993
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.I53 I56 1993gOff-site
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  • InP HBTs : growth, processing, and applications / B. Jalali and S.J. Pearton.

    • Text
    • Boston : Artech House, [1995], ©1995.
    • 1995-1995
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.96.B55 J34 1995Off-site
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  • Seventh International Conference on Indium Phosphide and Related Materials : conference proceedings : May 9-13, 1995, Hokkaido University Conference Hall, Sapporo, Hokkaido, Japan / sponsored by the Japan Society of Applied Physics, IEEE Lasers and Electro-Optics Society, and the IEEE Electron Devices Society.

    • Text
    • [New York] : Institute of Electrical and Electronics Engineers ; Piscataway, NJ : IEEE Service Center, [1995], ©1995.
    • 1995-1995
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.I53 I56 1995gOff-site
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  • Eighth International Conference on Indium Phosphide and Related Materials, April 21-25, l996, Convention Center "Stadtgarten", Schwäbisch Gmünd, Germany / sponsored by Information Technology Society within VDE (ITG), IEEE Lasers and Electro-Optics Society, IEEE Electron Devices Society.

    • Text
    • [New York] : Institute of Electrical and Electronics Engineers, [1996], ©1996.
    • 1996-1996
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.I53 I56 1996gOff-site
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  • 1997 International Conference on Indium Phosphide and Related Materials : 11-15 May 1997, Tara Hyanns Hotel and Resort, Hyannis, Cape Cod, Massachusetts, USA / sponsored by the IEEE Lasers and Electro-Optics Society and the IEEE Electron Devices Society.

    • Text
    • [New York, N.Y.] : Institute of Electrical and Electronics Engineers ; Piscataway, N.J. : IEEE Service Center, [1997], ©1997.
    • 1997-1997
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.I53 I56 1997gOff-site
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  • 1998 International Conference on Indium Phosphide and Related Materials : May 11-15, 1998, University of Tsukuba, University Hall, Tsukuba, Ibaraki, JAPAN / sponsored by the Japan Society of Applied Physics, IEEE/Lasers and Electro-Optics Society, IEEE/Electron Devices Society.

    • Text
    • [New York, N.Y.] : Institute of Electrical and Electronics Engineers ; Piscataway, N.J. : IEEE Service Center, [1998], ©1998.
    • 1998-1998
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.I53 I56 1998gOff-site
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  • InP-based materials and devices : physics and technology / edited by Osamu Wada, Hideki Hasegawa.

    • Text
    • New York : Wiley, [1999], ©1999.
    • 1999-1999
    • 1 Item
    FormatCall NumberItem Location
    Text TA1750 .I568 1999Off-site
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  • IPRM 1999 : Eleventh International Conference on Indium Phosphide and Related Materials : conference proceedings : May 16-20, 1999, Congress Center Davos, Davos, Switzerland / technical co-sponsors: Swiss Section of IEEE, IEEE/Lasers and Electro-Optics Society, IEEE/Electron Devices Society.

    • Text
    • Piscataway, N.J. : IEEE, [1999], ©1999.
    • 1999-1999
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.I53 I56 1999gOff-site
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  • Conference proceedings : 2000 International Conference on Indium Phosphide and Related Materials, 14-18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA / Sponsored by IEEE Electron Devices Society and the IEEELasers and Electro-Optics Society.

    • Text
    • Piscataway, N.J. : IEEE, [1999], ©1999.
    • 1999-1999
    • 1 Item
    FormatCall NumberItem Location
    Text TP245.I5 I57 2000Off-site
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  • InP and related compounds : materials, applications and devices / editor, M. O. Manasreh.

    • Text
    • Amsterdam : Gordon & Breach ; Abingdon : Marston, [2000], ©2000.
    • 2000-2000
    • 1 Item
    FormatCall NumberItem Location
    Text TA1750 .I5675 2000gOff-site
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  • Indium phosphide and related materials : 13th IPRM : conference proceedings : 2001 International Conference on Indium Phosphide and Related Materials : 14-18 May, 2000, Nara New Public Hall, Nara, Japan / sponsored by the Japan Society of Applied Physics [and others] ; in cooperation with the Institute of Electronics, Information and Communication Engineers [and others].

    • Text
    • Piscataway, New Jersey : IEEE, [2001], ©2001.
    • 2001-2001
    • 1 Item
    FormatCall NumberItem Location
    Text TP245.I5 I57 2001gOff-site
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  • 14th Indium Phosphide and Related Materials Conference : IPRM : conference proceedings : May 12-16, 2002, Stockholm, Sweden / sponsored by IEEE Electron Devices Society and IEEE Lasers and Electro-Optics Society.

    • Text
    • Piscataway, New Jersey : IEEE, [2002], ©2002.
    • 2002-2002
    • 1 Item
    FormatCall NumberItem Location
    Text TP245.I5 I57 2002gOff-site
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