Research Catalog

  • Thesaurus / INSPEC.

    • Text
    • [London] : Institution of Electrical Engineers, c1991-
    • 1991-1999
    • 4 Items
    FormatCall NumberItem Location
    Text JSP 78-99 1993Offsite
    FormatCall NumberItem Location
    Text JSP 78-99 1995Offsite
    FormatCall NumberItem Location
    Text JSP 78-99 1999Offsite
  • Properties of gallium arsenide.

    • Text
    • London ; New York : INSPEC, Institution of Electrical Engineers, c1986.
    • 1986
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 87-735Offsite
  • Properties of amorphous silicon.

    • Text
    • London ; New York : INSPEC, Institution of Electrical Engineers, c1985.
    • 1985
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 87-1111Offsite
  • Properties of amorphous silicon.

    • Text
    • London ; New York : INSPEC, Institution of Electrical Engineers, c1989.
    • 1989
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 89-617Offsite
  • Key abstracts. Business automation.

    • Text
    • [Hitchin, England] : INSPEC, The Institution of Electrical Engineers ; [Piscataway, NJ] : Institute of Electrical and Electronics Engineers, 1989-
    • 1989-present
    • 1 Item
    FormatCall NumberItem Location
    Text JBM 90-737 Jan. 1989-Jan. 1993, inc.Schwarzman Building - General Research Room 315

    Available - Can be used on site. Please visit New York Public Library - Schwarzman Building to submit a request in person.

  • Properties of gallium arsenide.

    • Text
    • London ; New York : INSPEC, Institution of Electrical Engineers, c1990.
    • 1990
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 90-954Offsite
  • Properties of indium phosphide.

    • Text
    • London ; New York : INSPEC, The Institution of Electrical Engineers, c1991.
    • 1991
    • 1 Item
    FormatCall NumberItem Location
    Text JSG 91-150Offsite
  • List of journals and other serial sources.

    • Text
    • London, England : Institution of Electrical Engineers, 1983-
    • 1983-present
    • 3 Items
    FormatCall NumberItem Location
    Text JSM 97-139 1989Offsite
    FormatCall NumberItem Location
    Text JSM 97-139 1994/1995Offsite
    FormatCall NumberItem Location
    Text JSM 97-139 1997/1998Offsite
  • Science abstracts. Series A, Physics abstracts.

    • Text
    • London : Institution of Electrical Engineers, c1967-
    • 1967-present
    • 594 Items
    FormatCall NumberItem Location
    Text JSM 95-251 no. 239854-250538 (Dec 15, 2007)Offsite
    FormatCall NumberItem Location
    Text JSM 95-251 no. 248399-256906 (Dec 1, 2006)Offsite
    FormatCall NumberItem Location
    Text JSM 95-251 no. 256907-271846 (Dec 15, 2006)Offsite
  • Properties of lattice-matched and strained indium gallium arsenide / edited by Pallab Bhattacharya.

    • Text
    • London : INSPEC, the Institution of Electrical Engineers, c1993.
    • 1993
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 94-336Offsite
  • Properties of group III nitrides / edited by James H. Edgar.

    • Text
    • London : INSPEC, Institution of Electrical Engineers, c1994.
    • 1994
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 95-323Offsite
  • Properties of narrow gap cadmium-based compounds / edited by Peter Capper.

    • Text
    • London : INSPEC, the Institution of Electrical Engineers, c1994.
    • 1994
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 94-747Offsite
  • Properties of strained and relaxed silicon germanium / edited by Erich Kasper.

    • Text
    • London : INSPEC, c1995.
    • 1995
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 95-462Offsite
  • Properties of metal silicides / edited by Karen Maex and Marc van Rossum.

    • Text
    • Stevenage : INSPEC, c1995.
    • 1995
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 96-25Offsite
  • Properties of III-V quantum wells and superlattices / edited by Pallab Bhattacharya.

    • Text
    • Stevenage : INSPEC, c1996.
    • 1996
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 96-687Offsite
  • Properties of gallium arsenide / edited by M.R. Brozel and G.E. Stillman.

    • Text
    • London : INSPEC, 1996.
    • 1996
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 97-76Offsite
  • Properties of porous silicon / edited by Leigh Canham.

    • Text
    • London : INSPEC, c1987.
    • 1987
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 98-123Offsite
  • Properties of silicon carbide / edited by Gary L. Harris.

    • Text
    • London : INSPEC, Institution of Electrical Engineers, c1995.
    • 1995
    • 2 Items
    FormatCall NumberItem Location
    Text JSF 98-355Offsite
    FormatCall NumberItem Location
    Text JSF 98-355 2nd copyOffsite
  • Properties of crystalline silicon / edited by Robert Hull.

    • Text
    • London : INSPEC, the Institution of Electrical Engineers, c1999.
    • 1999
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 00-397Offsite
  • Tapes 73 : proceedings of the first INSPEC Tape Workshop, held in London, February 6-8th, 1973.

    • Text
    • London : INSPEC, Institution of Electrical Engineers, c1973.
    • 1973
    • 1 Item
    FormatCall NumberItem Location
    Text JSG 00-98Offsite
  • Properties of silicon germanium and SiGe:Carbon / edited by Erich Kasper and Klara Lyutovich.

    • Text
    • London : INSPEC, c2000.
    • 2000
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 00-821Offsite
  • INSPEC ondisc.

    • Text
    • Ann Arbor, MI : University Microfilms.
    • unknown-present
    • 7 Items
    FormatCall NumberItem Location
    Text *WSC-43 2002:Jan. -JuneOffsite
    FormatCall NumberItem Location
    Text *WSC-43 2002:Jan. -Mar.Offsite
    FormatCall NumberItem Location
    Text *WSC-43 2002:Jan. -Sept.Offsite
  • Properties of indium phosphide.

    • Text
    • London ; New York : INSPEC, [1991], ©1991.
    • 1991-1991
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.I53 P76 1991Off-site
  • Properties of gallium arsenide.

    • Text
    • London ; New York : INSPEC, The Institution of Electrical Engineers, [1990], ©1990.
    • 1990-1990
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.G3 P76 1990Off-site
  • List of journals and other serial sources.

    • Text
    • London, England : Institution of Electrical Engineers, 1983-
    • 1983-present
    • 1 Item
    FormatCall NumberItem Location
    Text Z7143 .I57 1996/7Off-site
  • Properties of aluminium gallium arsenide / edited by Sadao Adachi.

    • Text
    • Stevenage, Herts., UK : IEE : INSPEC, [1993], ©1993.
    • 1993-1993
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.G3 P767 1993gOff-site
  • Properties of lattice-matched and strained indium gallium arsenide / edited by Pallab Bhattacharya.

    • Text
    • London : INSPEC, the Institution of Electrical Engineers, [1993], ©1993.
    • 1993-1993
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.99.C65 P78 1993gOff-site
  • Properties of strained and relaxed silicon germanium / edited by Erich Kasper.

    • Text
    • London : INSPEC, [1995], ©1995.
    • 1995-1995
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.85 .P76 1995Off-site
  • Properties of narrow gap cadmium-based compounds / edited by Peter Capper.

    • Text
    • London : INSPEC, the Institution of Electrical Engineers, [1994], ©1994.
    • 1994-1994
    • 1 Item
    FormatCall NumberItem Location
    Text QC612.S4 C3 1994gOff-site
  • Properties of group III nitrides / edited by James H. Edgar.

    • Text
    • London : INSPEC, Institution of Electrical Engineers, [1994], ©1994.
    • 1994-1994
    • 1 Item
    FormatCall NumberItem Location
    Text TA455.N5 P76 1994gOff-site
  • Properties and growth of diamond / edited by Gordon Davies.

    • Text
    • London, U.K. : INSPEC, the Institution of Electrical Engineers, [1994], ©1994.
    • 1994-1994
    • 1 Item
    FormatCall NumberItem Location
    Text QE393 .P75 1994gOff-site
  • Properties of silicon carbide / edited by Gary L. Harris.

    • Text
    • London : INSPEC, Institution of Electrical Engineers, [1995], ©1995.
    • 1995-1995
    • 1 Item
    FormatCall NumberItem Location
    Text TP261.C3 P76 1995Off-site
  • Properties of gallium arsenide / edited by M.R. Brozel and G.E. Stillman.

    • Text
    • London : INSPEC, 1996.
    • 1996
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.G3 P76 1996gOff-site
  • Properties of porous silicon / edited by Leigh Canham.

    • Text
    • London : IEE : INSPEC, The Institution of Electrical Engineers, [1997], ©1997.
    • 1997-1997
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.S55 P75 1997gOff-site
  • Properties of III-V quantum wells and superlattices / edited by Pallab Bhattacharya.

    • Text
    • Stevenage : INSPEC, [1996], ©1996.
    • 1996-1996
    • 1 Item
    FormatCall NumberItem Location
    Text QC176.8.Q35 P76 1996gOff-site
  • Properties of metal silicides / edited by Karen Maex and Marc van Rossum.

    • Text
    • Stevenage : INSPEC, [1995], ©1995.
    • 1995-1995
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.S54 P76 1995gOff-site
  • Properties of amorphous silicon.

    • Text
    • London ; New York : INSPEC, Institution of Electrical Engineers, [1985], ©1985.
    • 1985-1985
    • 1 Item
    FormatCall NumberItem Location
    Text QD181.S6 P78 1985Off-site
  • Properties of lithium niobate / edited by K.K. Wong.

    • Text
    • London : INSPEC/Institution of Electrical Engineers, [2002], ©2002.
    • 2002-2002
    • 1 Item
    FormatCall NumberItem Location
    Text QD181.L5 P767 2002gOff-site
  • Properties of amorphous silicon.

    • Text
    • London ; New York : INSPEC, Institution of Electrical Engineers, [1989], ©1989.
    • 1989-1989
    • 1 Item
    FormatCall NumberItem Location
    Text QD181.S6 P78 1989Off-site
  • Properties of silicon.

    • Text
    • London ; New York : INSPEC, Institution of Electrical Engineers, [1988], ©1988.
    • 1988-1988
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.S55 P76 1988Off-site
  • Classification : a classification scheme for the INSPEC database /cINSPEC

    • Text
    • [London] : Institution of Electrical Engineers, [1991-
    • 1991-present
    • 2 Items
    FormatCall NumberItem Location
    Text Z697.S5C57q 1999Off-site
    FormatCall NumberItem Location
    Text Z697.S5C57q 1991Off-site
  • List of journals and other serial sources.

    • Text
    • London : Institution of Electrical Engineers, 1983-
    • 1983-present
    • 2 Items
    FormatCall NumberItem Location
    Text Z7143 .I57a 1991/1992Off-site
    FormatCall NumberItem Location
    Text Z7143 .I57a 2002/2003Off-site
  • Thesaurus / INSPEC.

    • Text
    • [London] : Institution of Electrical Engineers, c1991-
    • 1991-present
    • 1 Item
    FormatCall NumberItem Location
    Text Z695.1.P5 I57q 1999Off-site
  • Properties of porous silicon / edited by Leigh Canham.

    • Text
    • London, U.K. : IEE, INSPEC, ©1987.
    • 1987
    • 1 Item
    FormatCall NumberItem Location
    Text QD181.S6 P766 1997Off-site
  • Classification : a classification scheme for the INSPEC database /cINSPEC

    • Text
    • [London] : Institution of Electrical Engineers, [1991-
    • 1991-present
    • 2 Items
    FormatCall NumberItem Location
    Text Z697.S5 C57q 1991Off-site
    FormatCall NumberItem Location
    Text Z697.S5 C57q 1999Off-site
  • List of journals and other serial sources.

    • Text
    • London : Institution of Electrical Engineers, 1983-
    • 1983-present
    • 2 Items
    FormatCall NumberItem Location
    Text Z7143 .I57a 1991/1992Off-site
    FormatCall NumberItem Location
    Text Z7143 .I57a 2002/2003Off-site
  • Properties of gallium arsenide.

    • Text
    • London ; New York : INSPEC, Institution of Electrical Engineers, c1990.
    • 1990
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.15.G3 P76 1990Off-site
  • Properties of aluminium gallium arsenide / edited by Sadao Adachi.

    • Text
    • London : IEE, INSPEC, ©1993.
    • 1993
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.8.G3 P766 1993Off-site
  • Thesaurus / INSPEC.

    • Text
    • [London] : Institution of Electrical Engineers, c1991-
    • 1991-present
    • 1 Item
    FormatCall NumberItem Location
    Text Z695.1.P5 I57q Oversize 1999Off-site

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