Research Catalog

  • The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon / Sheng S. Li, Department of Electrical Engineering, University of Florida.

    • Text
    • [Washington] : Department of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1979.
    • 1978
    • 1 Item
    FormatCall NumberItem Location
    Text C 13.10:400-47Off-site

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