Research Catalog

  • Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication / D. R. Myers, Electron Devices Division, Center for Electronics and Electronical Engineering, National Engineering Laboratory, National Bureau of Standards.

    • Text
    • Washington : Department of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt Print. Off., 1980.
    • 1980
    • 1 Item
    FormatCall NumberItem Location
    Text C 13.10:400-60Off-site

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