Research Catalog

  • Molecular beam epitaxy and heterostructures / edited by Leroy L. Chang, Klaus Ploog.

    • Text
    • Dordrecht ; Boston : M. Nijhoff, 1985.
    • 1985
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 85-1059Offsite
  • The Technology and physics of molecular beam epitaxy / edited by E.H.C. Parker.

    • Text
    • New York : Plenum Press, c1985.
    • 1985
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 86-1237Offsite
  • Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy / edited by John C. Bean ; assistant editors, S.S. Iyer, E. Kasper, Y. Shiraki.

    • Text
    • Pennington, NJ (10 S. Main St., Pennington 08534-2896) : Electrochemical Society, c1985.
    • 1985
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 86-1244Offsite
  • Molecular beam epitaxy of III-V compounds : a comprehensive bibliography, 1958-1983 / K. Ploog, K. Graf.

    • Text
    • Berlin ; New York : Springer-Verlag, 1984.
    • 1984
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 86-1526Offsite
  • Molecular beam epitaxy : fundamentals and current status / M.A. Herman, H. Sitter.

    • Text
    • Berlin ; New York : Springer-Verlag, c1989.
    • 1989
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 89-1279Offsite
  • III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A. / editors, C.W. Tu, V.D. Mattera, A.C. Gossard.

    • Text
    • Pittsburgh, Pa. : Materials Research Society, c1989.
    • 1989
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 91-90Offsite
  • Molecular beam epitaxy : proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, October 2-7, 1989 / edited by G. Minchev and L. Pramatarova.

    • Text
    • Aedermannsdorf, Switzerland ; Brookfield, VT : Trans Tech Publications, 1991.
    • 1991
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 91-1086Offsite
  • Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A. / editors, John C. Bean, Subramanian S. Iyer, Kang L. Wang.

    • Text
    • Pittsburgh, Pa. : Materials Research Society, c1991.
    • 1991
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 92-1882Offsite
  • Mechanisms of heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A. / editors, Matthew F. Chisholm ... [et al.].

    • Text
    • Pittsburgh, Pa. : Materials Research Society, c1992.
    • 1992
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 94-257Offsite
  • Gas source molecular beam epitaxy : growth and properties of phosphorus containing III-V heterostructures / M.B. Panish, H. Temkin.

    • Text
    • Berlin ; New York : Springer-Verlag, c1993.
    • 1993
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 94-188Offsite
  • Materials fundamentals of molecular beam epitaxy / Jeffrey Y. Tsao.

    • Text
    • Boston : Academic Press, c1993.
    • 1993
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 94-828Offsite
  • Common themes and mechanisms of epitaxial growth : symposium held April 13-15, 1993, San Francisco, California, U.S.A. / editors, Paul Fuoss ... [et al.].

    • Text
    • Pittsburgh, Pa. : Materials Research Society, c1993.
    • 1993
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 94-2068Offsite
  • Molecular beam epitaxy / edited by Alfred Cho.

    • Text
    • Woodbury, N.Y. : American Institute of Physics, c1994.
    • 1994
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 95-2Offsite
  • Molecular beam epitaxy : applications to key materials / edited by Robin F.C. Farrow.

    • Text
    • Park Ridge, N.J. : Noyes Publications, c1995.
    • 1995
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 95-1126Offsite
  • Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A. / editors, Charles W. Tu, Leslie A. Kolodziejski, Victor R. McCrary.

    • Text
    • Pittsburgh, Pa. : Materials Research Society, c1994.
    • 1994
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 95-1366Offsite
  • Fractal concepts in surface growth / Albert-Lászlo Barabási, H. Eugene Stanley.

    • Text
    • New York, NY, USA : Press Syndicate of the University of Cambridge, 1995.
    • 1995
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 96-131Offsite
  • Physics and applications of quantum wells and superlattices / edited by E.E. Mendez and K. von Klitzing.

    • Text
    • New York : Plenum Press, c1987.
    • 1987
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 88-1804Offsite
  • Molecular beam epitaxy : fundamentals and current status / M.A. Herman, H. Sitter.

    • Text
    • Berlin ; New York : Springer, c1996.
    • 1996
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 96-1700Offsite
  • Applied RHEED : reflection high-energy electron diffraction during crystal growth / Wolfgang Braun.

    • Text
    • Berlin ; New York : Springer, c1999.
    • 1999
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 99-1120Offsite
  • Growth processes and surface phase equilibria in molecular beam epitaxy / Nikolai N. Ledentsov.

    • Text
    • Berlin ; New York : Springer, c1999.
    • 1999
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 99-1597Offsite
  • Fabrication of photovoltaic laser energy converter by MBE [microform] / Hamilton Lu, Scott Wang, and W.S. Chan.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration, Scientific and Technical Information Program ; [Springfield, Va. : National Technical Information Service, distributor], 1993.
    • 1993
  • Method of forming three-dimensional semiconductor structures [microform] : awards abstract / inventor, Robert W. Fathauer.

    • Text
    • [Washington, D.C. : National Aeronautics and Space Administration; [Springfield, Va. : National Technical Information Service, distributor, 1990]
    • 1990
  • Theoretical and material studies on thin-film electroluminescent devices [microform] : fourth six-monthly report for the period 1 October 1986 - 31 March 1987 / C. J. Summers and R. Benz.

    • Text
    • [Washington, DC : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1987]
    • 1987
  • Ka-band GaAs FET monolithic power amplifier development [microform] : [contract no. NAS3-24239] / Paul Saunier and Hua Quen Tserng.

    • Text
    • [Washington, DC : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1997]
    • 1997
  • AlGaN channel transistors for power management and distribution [microform] : final report, phase I SBIR contract N00014-96-C-0251 / submitted by James M. van Hove.

    • Text
    • [Washington, DC : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1996]
    • 1996
  • InGaAsSb/GaSb thermophotovoltaic cells, phase I effort [microform] : under contract NAS3-96060 / Yabo Li ... [et al.].

    • Text
    • [Washington, DC : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1997]
    • 1997
  • In situ Untersuchungen des MBE- und MOMBE-Wachstums von LaF₃₋ und GaAs-Schichten auf Silizium / von Ralf Strümpler.

    • Text
    • Jülich : Zentralbibliothek der Kernforschungsanlage, [1989]
    • 1989
    • 1 Item
    FormatCall NumberItem Location
    Text JSG 03-10Offsite
  • High efficiency IMPATT diodes for 60 GHz intersatellite link applications [microform] / Edward J. Haugland.

    • Text
    • [Washington, D.C. : National Aeronautics and Space Administration, 1984]
    • 1984
  • 60 GHz IMPATT diode development [microform] : final report.

    • Text
    • Torrance, CA. : Hughes Aircraft Company ; [Cleveland, OH : National Aeronautics and Space Administration-Lewis Research Center ; Springfield, Va. : National Technical Information Service, distributor, 1985]
    • 1985
  • Determining the presence of ordering in ternary semiconductor alloys grown by molecular beam epitaxy / Wendy L. Sarney and Stefen P. Svensson.

    • Text
    • Adelphi, MD : Army Research Laboratory, 2013.
    • 2013
    • 1 Resource

    Available Online

    https://purl.fdlp.gov/GPO/gpo59630
  • Molecular beam epitaxy [electronic resource] : a short history / John Orton and Tom Foxon.

    • Text
    • Oxford : Oxford University Press, 2015.
    • 2015
    • 2 Resources

    Available Online

    See All Available Online Resources

  • Proceedings of the Thirteenth State-of-the Art Program on Compound Semiconductors (SOTAPOCS XIII) and the Symposium on Metallization of III-V Compound Semiconductors / edited by H.H. Lee [and others] ; Electronics and Dielectric Science and Technology divisions.

    • Text
    • Pennington, NJ (10 S. Main St., Pennington 08534-2896) : Electrochemical Society, [1991], ©1991.
    • 1991-1991
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.8.C64 S73 1990Off-site
  • Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A. / editors, John C. Bean, Subramanian S. Iyer, Kang L. Wang.

    • Text
    • Pittsburgh, Pa. : Materials Research Society, [1991], ©1991.
    • 1991-1991
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.6.M64 S57 1991Off-site
  • Materials fundamentals of molecular beam epitaxy / Jeffrey Y. Tsao.

    • Text
    • Boston : Academic Press, ©1993, ©1992.
    • 1993-1992
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.6.M64 T78 1993Off-site
  • Mechanisms of heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A. / editors, Matthew F. Chisholm [and others].

    • Text
    • Pittsburgh, Pa. : Materials Research Society, [1992], ©1992.
    • 1992-1992
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.6.M64 M43 1992Off-site
  • Common themes and mechanisms of epitaxial growth : symposium held April 13-15, 1993, San Francisco, California, U.S.A. / editors, Paul Fuoss [and others].

    • Text
    • Pittsburgh, Pa. : Materials Research Society, 1993.
    • 1993
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.6.M64 C66 1993Off-site
  • Gas source molecular beam epitaxy : growth and properties of phosphorus containing III-V heterostructures / M.B. Panish, H. Temkin.

    • Text
    • Berlin ; New York : Springer-Verlag, [1993], ©1993.
    • 1993-1993
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.6.M64 P36 1993Off-site
  • Epitaxial growth processes : 26-27 January 1994, Los Angeles, California / Chris J. Palmstrøm, Maria C. Tamargo, chairs/editors ; sponsored and published by SPIE--the International Society for Optical Engineering ; cooperating organization, Center for Advanced Technology for Ultrafast Photonic Materials and Applications, City University of New York.

    • Text
    • Bellingham, Wash., USA : SPIE, [1994], ©1994.
    • 1994-1994
    • 1 Item
    FormatCall NumberItem Location
    Text QD921 .E65 1994gOff-site
  • Molecular beam epitaxy / edited by Alfred Cho.

    • Text
    • Woodbury, N.Y. : American Institute of Physics, [1994], ©1994.
    • 1994-1994
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.6.M64 M64 1994Off-site
  • Fractal concepts in surface growth / Albert-Lászlo Barabási, H. Eugene Stanley.

    • Text
    • Cambridge, England ; New York, NY, USA : Cambridge University Press, 1995.
    • 1995
    • 1 Item
    FormatCall NumberItem Location
    Text QC173.4.S94 B37 1995Off-site
  • Solid state crystals : materials science and applications : 23-27 October, 1994, Zakopane, Poland / Józef Żmija [and others], chairs/editors ; organized by Institute of Technical Physics, Military University of Technology, Warsaw (Poland); sponsored by State Committee for Scientific Research (Poland) [and others] ; published by SPIE--the International Society for Optical Engineering.

    • Text
    • Bellingham, Wash. : SPIE, [1995], ©1995.
    • 1995-1995
    • 1 Item
    FormatCall NumberItem Location
    Text QD921 .S58 1995gOff-site
  • Delta-doping of semiconductors / edited by E.F. Schubert.

    • Text
    • Cambridge ; New York : Cambridge University Press, 1995.
    • 1995
    • 1 Item
    FormatCall NumberItem Location
    Text TK7871.85 .D457 1995Off-site
  • Molecular beam epitaxy : fundamentals and current status / M.A. Herman, H. Sitter.

    • Text
    • Berlin ; New York : Springer, [1996], ©1996.
    • 1996-1996
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.6.M64 H47 1996Off-site
  • Selected topics in group IV and II-VI semiconductors : proceedings of Symposium L, 6th International Symposium on Silicon Molecular Beam Epitaxy, and Symposium D on Purification, Doping and Defects in II-VI Materials of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995 / edited by E. Kasper [and others].

    • Text
    • Amsterdam ; New York : Elsevier, 1996.
    • 1996
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.6.M64 I58 1995Off-site
  • Solid state crystals in optoelectronics and semiconductor technology : 7-11 October 1996, Zakopane, Poland / Antoni Rogalski [and others], chairs/editors ; organized by Institute of Applied Physics, Military University of Technology, Warsaw (Poland) ; sponsored by State Committee for Scientific Research (Poland) [and others].

    • Text
    • Bellingham, Wash., USA : SPIE, [1997], ©1997.
    • 1997-1997
    • 1 Item
    FormatCall NumberItem Location
    Text QD921 .S585 1997gOff-site
  • Solid state crystals: growth and characterization : 7-11 October 1996, Zakopane, Poland / Jʹozef Żmija [and others], chairs/editors ; organized by Institute of Applied Physics, Military University of Technology, Warsaw (Poland) ; sponsored by State Committee for Scientific Research (Poland) [and others] ; published by SPIE--the International Society for Optical Engineering.

    • Text
    • Bellingham, Washington : SPIE, [1997], ©1997.
    • 1997-1997
    • 1 Item
    FormatCall NumberItem Location
    Text QD921 .S574 1997gOff-site
  • III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. / editors F.A. Ponce [and others].

    • Text
    • Pittsburgh, Pa. : Materials Research Society, [1997], ©1997.
    • 1997-1997
    • 1 Item
    FormatCall NumberItem Location
    Text QC176.9.M84 A14 1997Off-site
  • Applied RHEED : reflection high-energy electron diffraction during crystal growth / Wolfgang Braun.

    • Text
    • New York : Springer, 1999.
    • 1999
    • 1 Item
    FormatCall NumberItem Location
    Text 508 Er38 v.154Off-site
  • Fundamental mechanisms of low-energy-beam-modified surface growth and processing : symposium held 29 November through 2 December, 1999, Boston, Massachusetts, U.S.A. / editors, Steven C. Moss [and others].

    • Text
    • Warrendale, Pa. : Materials Research Society, 2000.
    • 2000
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.6.M64 F86 2000Off-site
  • MBE XII 2002 : 2002 International Conference on Molecular Beam Epitaxy : Renaissance Parc 55 Hotel, San Francisco, CA / sponsored by IEEE Lasers and Electro-optics Society.

    • Text
    • Piscataway, New Jersey : IEEE, [2002], ©2002.
    • 2002-2002
    • 1 Item
    FormatCall NumberItem Location
    Text QC611.6.M64 I57 2002gOff-site

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