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Minority-carrier lifetime in InP as a function of light bias [microform] / Jane A. Yater ... [et al.].
- Text
- [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1994]
- 1994
Measurement of carrier transport and recombination parameter in heavily doped silicon [microform] : final report.
- Text
- Stanford, CA : Solid State Electronics Laboratory, Stanford Electronics Laboratories, Dept. of Electrical Engineering, Stanford University ; [Washington, D.C. : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1986-
- 1986-present
Effect of crystal defects on minority carrier diffusion length in 6H SiC measured using the electron beam induced current method [microform] / M. Tabib-Azar.
- Text
- [Washington, DC : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1997]
- 1997
Heavy doping effects in high efficiency silicon solar cells : annual report for period covering June 24, 1984 - June 23, 1985 / by F.A. Lindholm and A. Neugroschel.
- Text
- [Pasadena, Calif.] : [National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology], [1985]
- 1985
- 1 Resource
Available Online
https://purl.fdlp.gov/GPO/LPS112731Heavy doping effects in high efficiency silicon solar cells [microform] : annual report for period covering June 24, 1984 - June 23, 1985 / by F.A. Lindholm and A. Neugroschel.
- Text
- [Pasadena, Calif. : National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1985]
- 1985
- 1 Resource
Available Online
http://purl.access.gpo.gov/GPO/LPS112731
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