Research Catalog

  • Minority-carrier lifetime in InP as a function of light bias [microform] / Jane A. Yater ... [et al.].

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1994]
    • 1994
  • Measurement of carrier transport and recombination parameter in heavily doped silicon [microform] : final report.

    • Text
    • Stanford, CA : Solid State Electronics Laboratory, Stanford Electronics Laboratories, Dept. of Electrical Engineering, Stanford University ; [Washington, D.C. : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1986-
    • 1986-present
  • Effect of crystal defects on minority carrier diffusion length in 6H SiC measured using the electron beam induced current method [microform] / M. Tabib-Azar.

    • Text
    • [Washington, DC : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1997]
    • 1997
  • Heavy doping effects in high efficiency silicon solar cells : annual report for period covering June 24, 1984 - June 23, 1985 / by F.A. Lindholm and A. Neugroschel.

    • Text
    • [Pasadena, Calif.] : [National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology], [1985]
    • 1985
    • 1 Resource

    Available Online

    https://purl.fdlp.gov/GPO/LPS112731
  • Heavy doping effects in high efficiency silicon solar cells [microform] : annual report for period covering June 24, 1984 - June 23, 1985 / by F.A. Lindholm and A. Neugroschel.

    • Text
    • [Pasadena, Calif. : National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1985]
    • 1985
    • 1 Resource

    Available Online

    http://purl.access.gpo.gov/GPO/LPS112731

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