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Displaying 1-8 of 8 results for author "Thurber, W. Robert."
A FORTRAN program for calculating the electrical parameters of extrinsic silicon / R. D. Larrabee, W. R. Thurber, W. Murray Bullis.
- Text
- Gaithersburg, MD : U.S. Dept. of Commerce, National Institute of Standards and Technology, 1980.
- 1980
- 1 Resource
Available Online
https://purl.fdlp.gov/GPO/gpo105252Improved characterization and evaluation measurements for HgCdTe detector materials, processes, and devices used on the GOES and TIROS satellites / D. G. Seiler, J. R. Lowney, W. R. Thurber, J. J. Kopanski, G. G. Harman.
- Text
- Gaithersburg, MD : U.S. Dept. of Commerce, National Institute of Standards and Technology, 1994.
- 1994
- 1 Resource
Available Online
https://purl.fdlp.gov/GPO/gpo97991A FORTRAN program for calculating the electrical parameters of extrinsic silicon / R. D. Larrabee, W. R. Thurber, and W. M. Bullis.
- Text
- Washington, D.C. : U.S. Department of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1980.
- 1980
- 1 Item
Item details Format Call Number Item Location Text C 13.10:400-63 Off-site The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon / W.R. Thurber [and others].
- Text
- Washington, D.C. : U.S. Department of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1981.
- 1981
- 1 Item
Item details Format Call Number Item Location Text C 13.10:400-64 Off-site The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon / W.R. Thurber ... [et al.].
- Text
- Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., [1981]
- 1981
- 1 Item
Item details Format Call Number Item Location Text C 13.10:400-64 Off-site A FORTRAN program for calculating the electrical parameters of extrinsic silicon / R.D. Larrabee, W.R. Thurber, and W.M. Bullis.
- Text
- Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1980.
- 1980
- 1 Item
Item details Format Call Number Item Location Text C 13.10:P400-63 Off-site The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon / W.R. Thurber ... [et al.].
- Text
- Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., [1981]
- 1981
- 1 Item
Item details Format Call Number Item Location Text C 13.10:400-64 Off-site A FORTRAN program for calculating the electrical parameters of extrinsic silicon / R.D. Larrabee, W.R. Thurber, and W.M. Bullis.
- Text
- Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1980.
- 1980
- 1 Item
Item details Format Call Number Item Location Text C 13.10:P400-63 Off-site
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