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  • Subcommittee No. 3 hearings on S. 766, to authorize the disposal of zinc from the national stockpile and the supplemental stockpile; and S. 754, to authorize the disposal of silicon carbide from the national stockpile and the supplemental stockpile.

    • Text
    • [Washington, 1971]
    • 1971
    • 1 Item
    FormatCall NumberItem Location
    Text JLE 77-2847Offsite

  • Feuerfest-Siliciumcarbid / E. H. Peter Wecht.

    • Text
    • Wien ; New York : Springer-Verlag, 1977.
    • 1977
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 79-191Offsite

  • Reakcje chemiczne w układzie SiC [subscript (s)]-O [subscript 2(g)] w podwyższonych temperaturach / Roman Pampuch, Stanisława Jonas, Wiesław S. Ptak. Podstawy wykorzystania polimorficznych przemian fazowych ortokrzemianu wapniowego w procesach technologicznych / Anna Derdacka-Grzymek.

    • Text
    • Wrocław : Zakład Narodowy im. Ossolińskich, 1981.
    • 1981
    • 1 Item
    FormatCall NumberItem Location
    Text *QO 86-4383Offsite

  • Amorphous and crystalline silicon carbide and related materials : proceedings of the first international conference, Washington DC, December 10 and 11, 1987 / editors, G.L. Harris and C.Y.-W. Yang.

    • Text
    • Berlin ; New York : Springer-Verlag, c1989.
    • 1989
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 89-351Offsite

  • Amorphous and crystalline silicon carbide III and other group IV-IV materials : proceedings of the 3rd international conference, Howard University, Washington, D.C., April 11-13, 1990 / G.L. Harris, M.G. Spencer, C.Y.-W. Yang (eds.).

    • Text
    • Berlin ; New York : Springer-Verlag, c1992.
    • 1992
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 92-1499Offsite

  • Diamond, silicon carbide, and related wide bandgap semiconductors : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A. / editors, J.T. Glass, R. Messier, N. Fujimori ; sponsors, Air Products and Chemicals Company ... [et al.].

    • Text
    • Pittsburgh, Pa. : Materials Research Society, c1990.
    • 1990
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 92-1903Offsite

  • Amorphous and crystalline silicon carbide IV : proceedings of the 4th international conference, Santa Clara, CA, October 9-11, 1991 / C. Yang, M.M. Rahman, G. Harris, eds.

    • Text
    • Berlin ; New York : Springer-Verlag, c1992.
    • 1992
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 93-300Offsite

  • Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A. / editors, T.D. Moustakas, J.I. Pankove, Y. Hamakawa.

    • Text
    • Pittsburgh, Pa. : Materials Research Society, c1992.
    • 1992
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 93-752Offsite

  • Silicon carbide; proceedings.

    • Text
    • Columbia, Univ. of South Carolina Press.
    • 19-19
    • 1 Item
    FormatCall NumberItem Location
    Text JSP 75-223 v. 3 (1973)Offsite

  • Silicon carbide and related materials, 1995 : proceedings of the Sixth International Conference, Kyoto, Japan, 18-21 September 1995 / edited by S. Nakashima ... [et al.].

    • Text
    • Bristol ; Philadelphia : Institute of Physics Pub., c1996.
    • 1996
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 96-1421Offsite

  • Silicon carbide, III-nitrides and related materials : ICSCIII-N'97 : Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997 / editors, G. Pensl ... [et al.].

    • Text
    • Uetikon-Zurich, Switzerland ; Einfield, N.H., USA : Trans Tech Publications, c1998.
    • 1998
    • 2 Items
    FormatCall NumberItem Location
    Text JSE 98-440 pt. 1Offsite
    FormatCall NumberItem Location
    Text JSE 98-440 pt. 2Offsite

  • SiC materials and devices / volume editor, Yoon Soo Park.

    • Text
    • San Diego : Academic Press, c1998.
    • 1998
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 98-849Offsite

  • Properties of silicon carbide / edited by Gary L. Harris.

    • Text
    • London : INSPEC, Institution of Electrical Engineers, c1995.
    • 1995
    • 2 Items
    FormatCall NumberItem Location
    Text JSF 98-355Offsite
    FormatCall NumberItem Location
    Text JSF 98-355 2nd copyOffsite

  • Silicon carbide. Edited by I. N. Frantsevich. Translated from the Russian by Simon Lyse.

    • Text
    • New York, Consultants Bureau, 1970.
    • 1970
    • 1 Item
    FormatCall NumberItem Location
    Text VEE (Vsesoyuznaya Konferentziya po Karbidu Kemniya, Kiev, 1964. Silicon carbide)Offsite

  • Silicon carbide, a high temperature semiconductor; proceedings. Edited by J. R. O'Connor and J. Smiltens.

    • Text
    • Oxford, New York, Symposium Publications Division, Pergamon Press, 1960.
    • 1960
    • 1 Item
    FormatCall NumberItem Location
    Text TTE (Conference on Silicon Carbide, Boston, 1959. Silicon carbide, a high temperature semiconductor)Offsite

  • Carborundum; its history, manufacture and uses, by E.G. Acheson.

    • Text
    • Philadelphia, 1893.
    • 1893-1893
    • 1 Item
    FormatCall NumberItem Location
    Text PKR p.v. 34, no. 1 no. 1-15Schwarzman Building - General Research Room 315
    Request for On-site UseRequest Scan

    Available - Can be used on site. Please visit New York Public Library - Schwarzman Building to submit a request in person.

  • The manufacture and development of carborundum at Niagara Falls, by Francis A. Fitzgerald ...

    • Text
    • Philadelphia, Franklin Institute, 1897.
    • 1897-1897
    • 1 Item
    FormatCall NumberItem Location
    Text PKR p.v. 34, no. 1 no. 1-15Schwarzman Building - General Research Room 315
    Request for On-site UseRequest Scan

    Available - Can be used on site. Please visit New York Public Library - Schwarzman Building to submit a request in person.

  • Wide-bandgap semiconductors for high-power, high-frequency, and high temparture applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A. / editors, Steven C. Binari ... [et al.].

    • Text
    • Warrendale, PA : Materials Research Society, 1999.
    • 1999
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 00-1378Offsite

  • The romance of carborundum ...

    • Text
    • Niagara Falls, N.Y., U.S.A., The Carborundum Co. [1932]
    • 1932

  • Silicon carbide and related materials--1999 : ICSCRM'99 : proceedings of the [8th] International Conference on Silicon Carbide and Related Materials--1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999 / editors: Calvin H. Carter, Jr., Robert P. Devaty and Gregory S. Rohrer.

    • Text
    • Uetikon-Zurich, Switzerland ; Einfield, N.H. : Trans Tech Publications, c2000.
    • 2000
    • 2 Items
    FormatCall NumberItem Location
    Text JSE 00-1406 Pt. 1Offsite
    FormatCall NumberItem Location
    Text JSE 00-1406 Pt. 2Offsite

  • Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000 / editors, G. Pensl, D. Stephani and M. Hundhausen.

    • Text
    • Uetikon-Zuerich, Switzerland ; Enfield, NH : Trans Tech Publications, c2001.
    • 2001
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 01-268Offsite

  • Development of silicon carbide semiconductor devices for high temperature applications [microform] / Lawrence G. Matus and J. Anthony Powell and Jeremy B. Petit.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service, 1991]
    • 1991

  • Advances in silicon carbide chemical vapor deposition (CVD) for semiconductor device fabrication [microform] / J. Anthony Powell, Jeremy B. Petit, Lawrence G. Matus.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service, 1991]
    • 1991

  • Analysis of thermomechanical fatigue of unidirectional titanium metal matrix composites [microform] / M. Mirdamadi ... [et al.].

    • Text
    • Hampton, Va. : National Aeronautics and Space Administration, Langley Research Center ; [Springfield, Va. : For sale by the National Technical Information Service, 1991]
    • 1991

  • Temperature-dependent reflectivity of silicon carbide [microform] / Daniel Ng.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service, 1992]
    • 1992

  • An overview of silicon carbide device technology [microform] / Philip G. Neudeck and Lawrence G. Matus.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service, 1992]
    • 1992

  • Microstructural and strength stability of CVD SiC fibers in argon environment [microform] / Ramakrishna T. Bhatt and David R. Hull.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [St. Louis, Mo.] : US Army Aviation Systems Command ; [Springfield, Va. : For sale by the National Technical information Service, 1991]
    • 1991

  • CVD of silicon carbide on structural fibers [microform] : microstructure and composition / Lisa C. Veitch, Francis M. Teroaka and Suleyman A. Gokoglu.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service, 1992]
    • 1992

  • Thermal degradation study of silicon carbide threads developed for advanced flexible thermal protection systems [microform] / Huy Kim Tran and Paul M. Sawko.

    • Text
    • Moffett Field, Calif. : National Aeronautics and Space Administration, Ames Research Center ; [Springfield, Va. : For sale by the National Technical Information Service, 1992]
    • 1992

  • Improved silicon carbide for advanced heat engines [microform] : third annual report / Thomas J. Whalen.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1988]
    • 1988

  • Damping mechanisms in chemically vapor deposited SiC fibers [microform] / James A. DiCarlo and Jon C. Goldsby.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1993]
    • 1993

  • System integration and demonstration of adhesive bonded high temperature aluminum alloys for aerospace structure [microform] : phase II / Anthony Falcone and John H. Laakso.

    • Text
    • Hampton, Va. : National Aeronautics and Space Administration, Langley Research Center ; [Springfield, Va. : National Technical Information Service, distributor, 1993]
    • 1993

  • A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments [microform] / S.A. Gokoglu and M.A. Kuczmarski.

    • Text
    • [Washington, DC : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1993]
    • 1993

  • Synthesis of multifilament silicon carbide fibers by chemical vapor deposition [microform] : final technical report ... / Vithal Revankar and Vladimir Hlavacek.

    • Text
    • Buffalo, N.Y. : Laboratory for Ceramic and Reaction Engineering, Dept. of Chemical Engineering, State University of New York at Buffalo ; Cleveland, OH : NASA Lewis Research Center, [1991]
    • 1991

  • Silicon carbide from the People's Republic of China [microform].

    • Text
    • Washington, DC : U.S. International Trade Commission, [1993]
    • 1993

  • Damping mechanisms in chemically vapor deposited SiC fibers [microform] / James A. DiCarlo and Jon C. Goldsby.

    • Text
    • [Washington, D.C.?] : NASA ; [Springfield, Va. : National Technical Information Service [distributor, 1993]
    • 1993

  • Method of producing a silicon carbide fiber reinforced strontium aluminosilicate glass-ceramic matrix composite [microform] / inventor, Narottam P. Bansal.

    • Text
    • [Washington, DC : National Aeronautics and Space Administration, 1993]
    • 1993

  • Silicon carbide from the People's Republic of China [microform]

    • Text
    • Washington, DC : U.S. International Trade Commission, [1994]
    • 1994

  • Theoretical considerations for reaction-formed silicon carbide (RFSC) formation by molten silicon infiltration into slurry-derived preforms [microform] / D.R. Behrendt and M. Singh.

    • Text
    • [Washington, DC : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1993]
    • 1993

  • Improved silicon carbide for advanced heat engines [microform] / Thomas J. Whalen.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1989]
    • 1989

  • Thermal expansion and elastic anisotropy in single crystal Al₂O₃ and SiC reinforcements [microform] / Jonathan A. Salem and Zhuang Li, Richard C. Bradt.

    • Text
    • [Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1994]
    • 1994

  • Evaluation of several micromechanics models for discontinuously reinforced metal matrix composites [microform] / W.S. Johnson and M.J. Birt.

    • Text
    • Hampton, Va. : National Aeronautics and Space Administration, Langley Research Center ; [Springfield, Va. : National Technical Information Service, distributor, 1990]
    • 1990

  • Determination of impurities in silicon carbide by CTP AES (inductively coupled plasma atmomic emission spectrometry) after coprecipitation with Lanthanum hydroxide [microform] / Y. Harada, N. Kurata, G. Furuno.

    • Text
    • Washington, DC : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1988]
    • 1988

  • Modeling and life prediction methodology for titanium matrix composites subjected to mission profiles [microform] / M. Mirdamadi, W.S. Johnson.

    • Text
    • Hampton, Va. : National Aeronautics and Space Administration, Langley Research Center ; [Springfield, Va. : National Technical Information Service, distributor, 1994]
    • 1994

  • Silicon carbide and related materials 2001 : ICSCRM2001 : proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001 / edited by S. Yoshida ... [et al.]

    • Text
    • Uetikon, Switzerland ; Enfield, N.H. : Trans Tech Publications, c2002.
    • 2002
    • 2 Items
    FormatCall NumberItem Location
    Text JSE 02-871 pt. 1Offsite
    FormatCall NumberItem Location
    Text JSE 02-871 pt. 2Offsite

  • SiC processing technology for fabricating MOSFET devices and micromachined condenser microphones / Stephan Berberich.

    • Text
    • Aachen : Shaker, 2000.
    • 2000
    • 1 Item
    FormatCall NumberItem Location
    Text JSC 03-51Offsite

  • Process technology for silicon carbide devices / edited by Carl-Mikael Zatterling.

    • Text
    • London : Institution of Electrical Engineers, c2002.
    • 2002
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 03-375Offsite

  • Paralinear oxidation of CVD SiC in water vapor [microform] / Elizabeth J. Opila, Raiford E. Hann, Jr.

    • Text
    • [Washington, D.C. : National Aeronautics and Space Administration, 1997]
    • 1997-1997

  • Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden / edited by Peder Bergman, Erik Janzén.

    • Text
    • Uetikon-Zuerich, Switzerland ; Enfield, NH : Trans Tech Publications, c2003.
    • 2003
    • 1 Item
    FormatCall NumberItem Location
    Text JSF 03-918Offsite

  • Wide energy bandgap electronic devices / [edited by] Fan Ren, John C. Zolper.

    • Text
    • River Edge, NJ ; London : World Scientific Pub., c2003.
    • 2003
    • 1 Item
    FormatCall NumberItem Location
    Text JSE 03-1822Offsite

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